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In situ atomic level studies of thermally controlled interlayer stacking shifts in 2D transition metal dichalcogenide bilayers

Published online by Cambridge University Press:  13 January 2020

Si Zhou ,
Jun Chen  and
Jamie H. Warner Open the ORCID record for Jamie H. Warner [Opens in a new window]
Si Zhou
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, U.K.
Jun Chen
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, U.K.
Jamie H. Warner*
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, U.K.
*
a)Address all correspondence to this author. e-mail: Jamie.warner@materials.ox.ac.uk
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Abstract

We show interlayer stacking shifts occur in transition metal dichalcogenides (TMD) bilayers due to the strain introduced during sample heating, and attributed to rippling of one layer relative to the other. The atomic structure of the interlayer stacking is studied using annular dark field scanning transmission electron microscopy with an in situ heating holder. Before heating, bilayers show uniform interlayer stacking of AA′ and AB. When heated, contrast change is seen and associated with interlayer stacking changes at the atomic scale due to ripples. When cooled down to room temperature, these contrast features disappear, confirming it is a reversible process that is not related to defects or vacancies. Because the bottom layer is attached to the in situ heating chip made from Si3N4 and the top layer is in contact with the underlying TMD layer with weak van der Waals interaction, the two layers experience different forces during thermal expansion.

Keywords

transmission electron microscopythin filmnanostructure
Type
Invited Paper
Information
Journal of Materials Research , Volume 35 , Issue 11: Focus Section: Heterogeneity in Beyond Graphene 2D Materials , 15 June 2020 , pp. 1407 - 1416
Copyright
Copyright © Materials Research Society 2020

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