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7 - APPROXIMATE METHODS

Published online by Cambridge University Press:  05 June 2012

John H. Davies
Affiliation:
University of Glasgow
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Summary

Few problems in physics and engineering can be solved exactly, and one has to resort to approximate or numerical methods. Consider, for example, an electron in a square well whose potential is tilted by applying an electric field. The energy and wave function of its states change only slightly if the field is small. The lowest state becomes polarized to the deeper part of the well, causing a quadratic reduction in its energy. Perturbation theory provides a framework for calculating such changes, and this example is discussed in Section 7.2.

This approach works well if the potential can be divided into a ‘large’ part that can be solved exactly and a ‘small’ perturbation. Other methods must be used if this is not the case. The WKB method described in Section 7.4 is applicable to potentials that vary slowly in space, and is closely related to classical mechanics. The variational method (Section 7.5) gives only the energy of the ground state but has unrivalled accuracy and can include electron–electron interaction and other complications.

There are many applications to band structure. The k · p method in Section 7.3 gives the form of energy bands near a gap, the most important region in a semiconductor. Two general methods take opposite points of view. The tight-binding method (Section 7.7) is based on a picture of isolated atoms brought together to form the solid, where the bands originate from atomic levels.

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The Physics of Low-dimensional Semiconductors
An Introduction
, pp. 249 - 289
Publisher: Cambridge University Press
Print publication year: 1997

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  • APPROXIMATE METHODS
  • John H. Davies, University of Glasgow
  • Book: The Physics of Low-dimensional Semiconductors
  • Online publication: 05 June 2012
  • Chapter DOI: https://doi.org/10.1017/CBO9780511819070.009
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  • APPROXIMATE METHODS
  • John H. Davies, University of Glasgow
  • Book: The Physics of Low-dimensional Semiconductors
  • Online publication: 05 June 2012
  • Chapter DOI: https://doi.org/10.1017/CBO9780511819070.009
Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

  • APPROXIMATE METHODS
  • John H. Davies, University of Glasgow
  • Book: The Physics of Low-dimensional Semiconductors
  • Online publication: 05 June 2012
  • Chapter DOI: https://doi.org/10.1017/CBO9780511819070.009
Available formats
×