Hostname: page-component-7479d7b7d-767nl Total loading time: 0 Render date: 2024-07-13T09:29:47.652Z Has data issue: false hasContentIssue false
  • English
  • Français

Determination of Thickness and Composition of Thin AlxGa1-xAs Layers on GaAs by Total Electron Yield (TEY)

Published online by Cambridge University Press:  06 March 2019

Maria F. Ebel ,
Robert Svagera ,
Horst Ebel ,
Robert Hobl ,
Michael Mantler ,
Johann Wernisch  and
Norbert Zagler
Maria F. Ebel
Affiliation:
Technische Universität Wien Institut für Angewandte und Technische Physik A 1040 Vienna (Austria), Wiedner Hauptstraβe 8-10
Robert Svagera
Affiliation:
Technische Universität Wien Institut für Angewandte und Technische Physik A 1040 Vienna (Austria), Wiedner Hauptstraβe 8-10
Horst Ebel
Affiliation:
Technische Universität Wien Institut für Angewandte und Technische Physik A 1040 Vienna (Austria), Wiedner Hauptstraβe 8-10
Robert Hobl
Affiliation:
Technische Universität Wien Institut für Angewandte und Technische Physik A 1040 Vienna (Austria), Wiedner Hauptstraβe 8-10
Michael Mantler
Affiliation:
Technische Universität Wien Institut für Angewandte und Technische Physik A 1040 Vienna (Austria), Wiedner Hauptstraβe 8-10
Johann Wernisch
Affiliation:
Technische Universität Wien Institut für Angewandte und Technische Physik A 1040 Vienna (Austria), Wiedner Hauptstraβe 8-10
Norbert Zagler
Affiliation:
Technische Universität Wien Institut für Angewandte und Technische Physik A 1040 Vienna (Austria), Wiedner Hauptstraβe 8-10
Get access

Extract

The measurement of the total electron yield (TEY) emitted from a solid specimen when irradiated by monochromatic x-rays is used for quantitative information on the specimen. For this purpose one has to determine the increase of TEY in the course of a variation of the photon energy from below to above the absorption edges of the specimen elements. These increases are the analytical quantities and are correlated with the composition of the specimen. The detected electrons are photo, Auger and secondary electrons. Most of them lost some of their original kinetic energy due to inelastic collisions along their path from the atom of origin to the surface. Low energy electrons are especially found in the secondary electron peak with electron energies of less than 20eV. Electrically nonconductive specimens under x-irradiation tend to positive surface charging.

Type
III. Applications of Diffraction to Semiconductors and Films
Information
Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 127 - 137
Copyright
Copyright © International Centre for Diffraction Data 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Ebei, H., Svagera, R., Ebel, M.F., and Zagler, N., Adv.in X-Ray Anal, (this volume) J., Sherman, Spectrochim.Acta 7: 283 (1955)Google Scholar
Shiraiwa, T., and Fujino, N., JpnJ.Appl.Phys. 5: 886 (1966)Google Scholar
Ebei, H., Mantler, M., Svagera, R., and Kaitna, R., Surf.Interface Anal. 22: 602 (1994)Google Scholar
Scofield, J.H., The or. Photo ionization Cross Sections from 1 to 1500keV, Lawrence Livermore Lab., Univ.of California/Li vermore. UCRL 51326 (1973)Google Scholar
Hubbell, J.H., Trehan, P.N., Singh, N., Chand, B., Metha, D., Garg, M.L., Garg, R.R., Smgh, S.,and Puri, S., J.Phys.Chem.Ref.Data 23: 339 (1994)Google Scholar
CRC Handbook of Chemistry and Physics, CRC Press, Inc. Boca Raton, Florida. Eds. R.C.Weast, and M J. As tie. E189 (1981)Google Scholar