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Generation of a Two-Dimensional Silicon Carbide Lattice*

Published online by Cambridge University Press:  06 March 2019

R. L. Prickett  and
R. L. Hough
R. L. Prickett
Affiliation:
Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio
R. L. Hough
Affiliation:
Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio
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Abstract

Silicon carbide vvas generated by pyrolysis of gas mixtures consisting of silicon tetrachloride, hydrogen, and organic vapors, such as acetone, on fine tungsten wires resistance-heated at 1500°C. Prominent two-dimensional structure was demonstrated for the 220 reflection. All other lines were of the normal threedimensional lattice type.

Elevation of less than 100° in the pyrolysis temperature eliminated the twodimensional reflection, and simultaneously changed the visible crystallite size.

Specialized techniques were used td generate the silicon carbide deposits and also to examine the structure of these deposits by X-ray diffraction to obtain lines from only the silicon carbide while ignoring the tungsten wire core. Diffraction techniques include offset collimation and vertical integration.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 9: Fourteenth Annual Conference on Applications of X-ray Analysis, August 25-27, 1965 , 1965 , pp. 142 - 151
Copyright
Copyright © International Centre for Diffraction Data 1965

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Footnotes

*

All rights reserved by the U.S. Air Force, Air Force Materials Laboratory. This research was done at Wright-Patterson Air Force Base under Task numbers 735101 and 734003.

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