Hostname: page-component-84b7d79bbc-fnpn6 Total loading time: 0 Render date: 2024-07-27T20:36:58.568Z Has data issue: false hasContentIssue false
  • English
  • Français

Measurement of Elastic Lattice Distortion in PbTe/PbSnTe - Strained Layer Superlatices by Asymmetric High Angle X-ray interfernces

Published online by Cambridge University Press:  06 March 2019

E. J. Fantner
E. J. Fantner*
Affiliation:
Institut für Physik, Montanuniversität, A-8700 Leoben, Austria
Get access

Abstract

Elastic strain significantly affects the electric and optical properties of PbTe/Pb1-xSnxTe - strained-layer superlattices. In the range of 10 - 350K the temperature dependence of the elastic strain present in these superlattices was measured by double-crystal x-ray diffraction. For superlattice periods smaller than 100nm High-angle x-ray interferences were observed. Using a novel method, which makes use of the High-angle interferences both for symmetrical as well as for asymmetrical reflections in a theta-twotheta scan with a narrow detector slit, the relative inclination of equivalent lattice planes due the elastic strain was measured. The components of the complete strain tensor of the constituent layers can be determined seperately even if their unstrained lattice constants are not known with sufficient accuracy as is the case in ternary and quaternary compounds. The lattice mismatch of up to 0.4% for Sn-contents smaller than 20% was found to be accommodated almost completely by elastic misfit strain. The amount of strain is shared between the constituent layers inversely to their relative thicknesses as long as the superlattice as a whole is much thicker than the buffer layer. Below room temperature an additional temperature dependent tensile strain due to differnt thermal expansion coefficients of the film and the BaF2-substrate is measured quantitatively.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 29: Thirty-Fourth Annual Conference on Applications of X-ray Analysis, August 5-9, 1985 , 1985 , pp. 367 - 374
Copyright
Copyright © International Centre for Diffraction Data 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Esaki, L., Semiconductor superlattices and quantum wells through development of molecular beam epitaxy, in: “Molecular Beam Epitaxy and Heterostructures”, Li.Chang and Ploog, K., ed., Martinus Hijhoff Publishers, Dordrecht/Boston/Lancaster (1985).Google Scholar
2. Hilliard, J.E., Artificial layer structures and their properties, in: “Modulated Structures”, Cowley, J.M., Cohen, J.B., Salamon, M.B., and Wuensch, B.J., ed., American Institute of Physics, New York (1979).Google Scholar
3. Pall, C.A.B. and van der Merwe, J.H., The growth of dislocation-free layers, in: “Dislocations in Solids”, Vol.6, Nabarro, F. R. N., ed., North- Holland Publishing Company, Amsterdam/New York/Oxford (1983).Google Scholar
4. Osbourn, G.C., Strained-layer superlattices from lattice mismatched materials, J.Appl.Phys. 53: 1586 (1982).Google Scholar
5. Brown, J.M., Holonyak, N., Jr., Kaliski, R.W., Jiudowise, M., Dietze, W.T. and Lewis, C.R., Direct observation of lattice distortion, in a- strainedlayer superlattice, Appl.Phys.Lett. 44: 1158 (1984).Google Scholar
6. Horikoshi, Y., Kawashima, M., and Saito, H., PbSnSeTe-PbSeTe lattice matched, double-heterostructure lasers, Appl.Phys.Lett 21: 77 (1982).Google Scholar
7. Pongratz, P., Clemens, H., Fantner, E.J., and Bauer, G., Dislocations and strains in PbTe/PbSnTe superlattices, Electron Microscopy of Semioond. Materials, Inst, of Phys. Conf. Ser., Oxford (1985).Google Scholar
8. Partin, Di., Lead Salt Quantum Well Diode Lasers, Super lattices and Micros tructures 1: 131 (1985).Google Scholar
9. Clemens, H., Fantner, E.J., and Bauer, G., Hot wall epitaxy system for growth of multilayer IV-VI. compound heterostructures, Rev.Sci.Instr. 54: 685 (1983).Google Scholar
10. Fantner, E.J. and Bauer, G., Strained layer IV-VI Semiconductor superlattices, in.: “Two-Dimensional Systems, Heterostructures, and Superlattices”, Springer Series in Solid-State Sciences, Vo 1.53, p.207, Bauer, G., Kuchar, F., and Heinrich, H., ed., Springerverlag, Berlin/Heidelberg/New York/Tokyo (1984).Google Scholar
11. Bond, W-L., Precision lattice constant determination, Acta Crystallogr. 13: 814 (1960).Google Scholar
12. Homstra, J..and Bartels, W.J., Determination of the lattice constant of epitaxial layers of III-V Compounds, J.Crystal Growth 44: 513 (1978).Google Scholar
13. Ortner, B., Simultanous Determination of the Lattice Constant and Elastic ’ Strain in Cubic Single Crystals by X-Ray Diffraction; Adv. X-Ray Anal. 29 (in press).Google Scholar
14. Fantner, E.J., Elastic strain in PbTe/PbSnTe heterostructures and superlattices, J. de Physique (in print).Google Scholar
15. de Fontane, D., - A Theoretical and analogue study of diffraction from onedimensional modulated structures, in: “Local Atomic Arrangement Studies by X-Ray Diffraction”, Metallurgigal Society Conferences, Vol.36, p.51, Cohen, J.B. and Hiliard, J.E., ed., Gordon and Breach, New York/London/Paris (1966).Google Scholar
16. Segmüller, A. and AJS.Blakeslee, X-ray diffraction from one-dimensional superlattices in GaAs2 crystals, J.Appl.Cryst. 6: 19 (1973).Google Scholar
17. Fleming, R.M., McWhan, D.B., ’ Gossard, A.C., W.Wiegmann, and Logan, R.A., X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs) m multilayers, J.Appl.Phys. 51: 357 (1980).Google Scholar
18. Quillec, M., Goldstein, L., LeRoux, G., Burgeat, J., and Erimot, J., Growth conditions and characterization of XnGaAs/GaAs strained layers superlattices, J.Appl.Phys. 55: 2904 (1984).Google Scholar
19. Fantner, E.J., Direct determination of elastic strain in strained - layer - superlattices by high-angle x-ray interferences, Appl.Phys.Lett, (in print).Google Scholar
20. Houston, B., Strakna, R.E., and Belscn, H.S., Elastic constants, thermal expansion, and Debye temoerature of lead telluride, J.Appl.Phys. 39: 3913 (1968).Google Scholar