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Quantitative Phase Analysis of Synthetic Silicon Nitride by X-Ray Diffraction

Published online by Cambridge University Press:  06 March 2019

Z. Mencik ,
M. A. Short  and
C. R. Peters
Z. Mencik
Affiliation:
Engineering & Research Staff, Ford Motor Company, Dearborn, Michigan 48121
M. A. Short
Affiliation:
Engineering & Research Staff, Ford Motor Company, Dearborn, Michigan 48121
C. R. Peters
Affiliation:
Engineering & Research Staff, Ford Motor Company, Dearborn, Michigan 48121
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Extract

Synthetically prepared silicon nitride is one of the more promising ceramic materials for structural components of gas turbines. Typical material may contain a-silicon nitride, Si3N4 (which is believed to always contain oxygen and therefore, according to Grievson, Jack and Wild, is more properly written as Si11.5N15O0.5), β-silicon nitride, Si3N4, silicon oxynitride, Si2ON2, silicon metal, Si, and α-cristobalite, SiO2. Because the physical properties of the ceramic parts are dependent on their phase composition, it is essential that a technique be available for performing a phase analysis. An X-ray diffraction procedure has been, developed for the quantitative phase analysis of synthetically prepared silicon nitride. This procedure converts experimentally measured intensities of selected X-ray diffraction peaks to weight fractions of components using empirically determined intensity coefficients.

Type
X-Ray Diffraction in Materials Analysis
Information
Advances in X-Ray Analysis , Volume 23: Twenty-Eighth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1979 , 1979 , pp. 375 - 379
Copyright
Copyright © International Centre for Diffraction Data 1979

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References

1. Grievson, P., Jack, K. H. and Wild, S., U. K. Ministry of Defense Contract, N/CP.61/9411/67/4B/MP.387, Progress Report no. 1.Google Scholar
2. Artz, B. E., Kao, E. C. and Short, M. A., “Using DEC Operating System RSX-11M for X-Ray Diffraction and X-Ray Fluorescence Analysis”, in McCarthy, G. J. et al, Editors, Advances in X-Ray Analysis, Vol. 22, pp. 425-431, Plenum Press (1979).Google Scholar