Hostname: page-component-5c6d5d7d68-wbk2r Total loading time: 0 Render date: 2024-08-18T08:13:07.501Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stress Relaxation in Vapor Deposited Thin Films

Published online by Cambridge University Press:  06 March 2019

I. C. Noyan  and
C. C. Goldsmith
I. C. Noyan
Affiliation:
Thomas J. Watson Research Center IBM Research Division Yorktown Heights, NY
C. C. Goldsmith
Affiliation:
IBM General Technology Division Hopewell Junction, NY
Get access

Abstract

Residual stresses are a major factor in the reliable operation of multi-layer thin film structures. These stresses form due to various causes. Defect incorporation during deposition, rccrystallization, second-phase precipitation, coefficient of thermal expansion (CTE) mismatch, etc., can all cause the formation of residual stress fields. These stress fields can also change during the operation of the device, depending on the temperature excursions seen during the operation. Again, the stress change may be due to any of the factors listed above, brought about by the temperature excursions.

In this paper we examine the formation and relaxation of residual stresses in “blanket” Al, Cu and Ni films subjected to temperature cycling. Comparison of the stress dependency on temperature to the total retained strain (measured by a micro-grid technique) is then used to determine the location of plastic flow within the film.

Type
XII. Analysis of Stress and Fracture by Diffraction Methods
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 587 - 600
Copyright
Copyright © International Centre for Diffraction Data 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Stoney, G. G., “The Tension of Metallic Films Deposited by Electrolysis”, Proc, Roy. Sac London A 82, 172–175 (1909).Google Scholar
2. Timoslicnko, S., “Analysis of Bi-metal Thermostats, J. Opt. Soc. Am., 11, 233–255 (1925).Google Scholar
3. Davidenkov, N. N., “Measurement of Residual Stresses in Electrolytic Deposits,” Sov. Phys.- Solid State 2, 2595–2598(1961).Google Scholar
4. Klokholm, E., Berry, B. S., “Intrinsic Stress in Evaporated Metal Films”, J. Electrochemical Society, Sol. Slate Sci., 115 823–826 (1968).Google Scholar
5. Segmuller, A., and Murakami, M., “Characterization of Thin Flims by X-Ray Diffraction,” in Thin Films from Free Atoms and Particles, K. J. Klabunde, Ed., Academic Press, New York (1985), 325–351.Google Scholar
6. Segmuller, A., Noyan, I. C., Speriosu, V. S., “X-Ray Diffraction Studies of Thin Films and Multilayer Structures”, Prog. Crystal Growth and Charact. 18, 21–66 (1989).Google Scholar
7. Noyan, I. C. and Goldsmith, C. C., “A Comparative Study of Stress Determination Techniques in Poly crystalline Thin Films”, Adv. in X-Ray Analysis, C. S. Barrett et al eds., 33, 137–144 (1990).10.1154/S0376030800019522Google Scholar
8. D'Heurle, F. M., Harper, J. M. E., “Note On the Origin of Intrinsic Stresses in Films Deposited via Evaporation and Sputtering”, Thin Solid Films , 171, 81–92 (1989).Google Scholar
9. D'Heurle, F. M., “Metallurgical Topics in Silicon Device Interconnections: Thin Film Stresses”, International Materials Reviews”, 34, 53–68 (1989).Google Scholar
10. Flinn, P. A., “Principles and Applications of Wafer Curvature Techniques for Stress Measurements in Thin Films”, MRS Syp. Proc., vol, 130 , J. C. Bravman et al., eds, 41-51 (1989).Google Scholar
11. Aitc, K., Holleman, J., Middelhoek, J., Koekock, R., “The Relationship Between Intrinsic Stress of Silicon Nitride Films and ton Generation in a 50 kHz RF Discharge”, MRS Syp. Proc, vol. 130 , J. C. Bravman et al., eds, 347-353 (1989).10.1557/PROC-130-347Google Scholar
12. Mura, T., “Micromechanics of Defects in Solids”, Martinus Nijhoff Publishers, The Hague, 1982.Google Scholar
13. Noyan, I. C. and Cohen, J. B., Residual Stress, Measurement by Diffraction and Interpretation, Springer, New York (1987).Google Scholar
14. Gardner, D. S. and Flinn, P. A., “Mechanical Stress as a Function of Temperature in Thin Aluminum Films and Its Alloys”, MRS Syp. Proc. vol. 130, J. C. Bravman et al., eds, 69–76 (1989).Google Scholar
15. Townsend, P., Barnett, D. M., Brunner, T. A., “Elastic Relationships In Layered Composite Media with Approximation for the Case of Thin Films on a Thick Substrate”, J. Appl. Phys. 62, 4438–4444 (1987).10.1063/1.339082Google Scholar
16. Sheikh, G., Noyan, I. C., “Residual Stresses and Differential Deformation of Electroplated Structures”, Adv. in X-Ray Analysis, C. S. Barrett et al., eds., 33, 137–144 (1990).Google Scholar
17. Segmullcr, A., Arigilelo, J., LaPlaca, S. J., “Automatic X-Ray Diffraction Measurement of the Lattice Curvature of Substrate Wafers for the Determination of Linear Strain Patterns,” J. Appl. Phys. 51, 6224–6230 (1980).10.1063/1.327606Google Scholar