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X-Ray DCD and EPMA Measurements of Al Concentration in Epitaxial AlxGa1-xAs/GaAs Layers

Published online by Cambridge University Press:  06 March 2019

D.A. Macquistan ,
I.C. Bassignana ,
A.J. SpringThorpe ,
R. Packwood  and
V. Moore
D.A. Macquistan
Affiliation:
Advanced Technology Laboratory, Bell-Northern Research Ltd. Ottawa, Canada K1Y-4H7
I.C. Bassignana
Affiliation:
Advanced Technology Laboratory, Bell-Northern Research Ltd. Ottawa, Canada K1Y-4H7
A.J. SpringThorpe
Affiliation:
Advanced Technology Laboratory, Bell-Northern Research Ltd. Ottawa, Canada K1Y-4H7
R. Packwood
Affiliation:
Metals Technology Laboratories, CANMET Energy Mines and Resources Canada 568 Booth St, Ottawa Ontario, Canada K1A-0G1
V. Moore
Affiliation:
Metals Technology Laboratories, CANMET Energy Mines and Resources Canada 568 Booth St, Ottawa Ontario, Canada K1A-0G1
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Abstract

Double Crystal X-Ray Diffraction (DCD) is often used to determine the Al content of AlxGa1-xAs/GaAs epitaxial layers. Assessing composition from a measurement of mismatch is problematic because it invokes a number of assumptions. This study bypasses these difficulties by comparing the measurement of mismatch directly with Al composition measurements made by electronprobe microanalysis. A study of coherent epitaxial AlxGa1-xAs layers showed that mismatch varies linearly with composition. The equation Al (x) = |ΔΘ| / 368 summarizes the relationship over the coherent range, where |ΔΘ| is measured in arc seconds.

Type
V. X-Ray Characterization of Thin Films
Information
Advances in X-Ray Analysis , Volume 36: Forty-First Annual Conference on Applications of X-ray Analysis, August 3-7, 1992 , 1992 , pp. 221 - 229
Copyright
Copyright © International Centre for Diffraction Data 1992

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