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High Resolution Measurement of Surface Misorientation in Single Crystal Wafers
Published online by Cambridge University Press: 06 March 2019
Abstract
A simple method for high-resolution measurement of surface misorientation in electronic materials is introduced. The technique combines laser optical alignment with double-crystal x-ray diffraction to yield a typical sensitivity of better than 1-2 arc sec. The technique can also be used to make corrections in spectrometric measurements in which commonly ignored rocking - curve errors may be significant.
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- Copyright © International Centre for Diffraction Data 1989
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