Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T11:09:09.087Z Has data issue: false hasContentIssue false
  • English
  • Français

A 60 GHz reconfigurable active phase shifter based on a vector modulator in 65 nm CMOS technology

Published online by Cambridge University Press:  10 March 2016

Boris Moret ,
Nathalie Deltimple ,
Eric Kerhervé ,
Baudouin Martineau  and
Didier Belot
Boris Moret*
Affiliation:
Université de Bordeaux, Laboratory IMS, CNRS UMR 5218, Bordeaux INP, Talence, France. Phone: +33 5 40 00 28 12 STMicroelectronics, Crolles, France
Nathalie Deltimple
Affiliation:
Université de Bordeaux, Laboratory IMS, CNRS UMR 5218, Bordeaux INP, Talence, France. Phone: +33 5 40 00 28 12
Eric Kerhervé
Affiliation:
Université de Bordeaux, Laboratory IMS, CNRS UMR 5218, Bordeaux INP, Talence, France. Phone: +33 5 40 00 28 12
Baudouin Martineau
Affiliation:
STMicroelectronics, Crolles, France CEA-LETI-MINATEC, Grenoble, France
Didier Belot
Affiliation:
CEA-LETI-MINATEC, Grenoble, France
*
Corresponding author: B. Moret Email: boris.moret@ims-bordeaux.fr
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper presents a 60 GHz reconfigurable active phase shifter based on a vector modulator implemented in 65 nm complementary metal–oxide–semiconductor technology. This circuit is based on the recombination of two differential paths in quadrature. The proposed vector modulator allows us to generate a phase shift between 0° and 360°. The voltage gain varies between −13 and −9 dB in function of the phase shift generated with a static consumption between 26 and 63 mW depending on its configuration.

Keywords

Applications and standards (mobile, wireless, networks)Circuit design and applications
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Issue 3: Journee Nationale des Micro-ondes (JNM) 2015 , May 2016 , pp. 399 - 404
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Siligaris, A. et al. : A 65-nm CMOS fully integrated transceiver module for 60-GHz wireless HD applications. JSSC 2011, IEEE J. Solid-State Circuits, 46(12) (2011), 3005–3017.CrossRefGoogle Scholar
[2]Dréan, S.; Martin, N.; Deltimple, N.; Kerhervé, E.; Martineau, B.; Belot, D.: A 60 GHz class F-E power VCO with vector-modulator feedback in 65 nm CMOS technology, in IEEE Int. Conf. on Electronics, Circuits and Systems (ICECS), December 2012, 173–176.CrossRefGoogle Scholar
[3]Moret, B.; Deltimple, N.; Kerhervé, E.; Larie, A.; Martineau, B.; Belot, D.: A 60 GHz highly reliable power amplifier with 13 dBm Psat 15% peak PAE in 65 nm CMOS technology, in IEEE Silicon Monolithic Integrated Circuits in RF Systems (SiRF), January 2015.CrossRefGoogle Scholar
[4]Zhou, C.; Qian, H.; Yu, Z.: A lumped elements varactor-loaded transmission-line phase shifter at 60 GHz, in 2010 10th IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), 2010, 656–658.CrossRefGoogle Scholar
[5]Tabesh, M.; Arbabian, A.; Niknejad, A.: 60 GHz low-loss compact phase shifters using a transformer-based hybrid in 65 nm CMOS, in 2011 IEEE Custom Integrated Circuits Conf. (CICC), 2011, 1–4.CrossRefGoogle Scholar
[6]Tsai, M.-D.; Natarajan, A.: 60 GHz passive and active RF-Path phase shifters in silicon, in IEEE Radio Frequency Integrated Circuits Symp., 2009. RFIC 2009, 2009, 223–226.Google Scholar
[7]Juntunen, E.; Dawn, D.; Laskar, J.; Papapolymerou, J.: CMOS 45 GHz vector modulator with gain/phase correction through calibration. Electron. Lett. 49 (4) (février 2013), 267–269.CrossRefGoogle Scholar