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AlGaN/GaN epitaxy and technology

Published online by Cambridge University Press:  11 March 2010

Patrick Waltereit ,
Wolfgang Bronner ,
Rüdiger Quay ,
Michael Dammann ,
Rudolf Kiefer ,
Wilfried Pletschen ,
Stefan Müller ,
Rolf Aidam ,
Hanspeter Menner  and
Lutz Kirste
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Patrick Waltereit*
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Wolfgang Bronner
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rüdiger Quay
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Michael Dammann
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Wilfried Pletschen
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Stefan Müller
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rolf Aidam
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Hanspeter Menner
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Lutz Kirste
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Klaus Köhler
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Michael Mikulla
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Oliver Ambacher
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
*
Corresponding author: P. Waltereit Email: patrick.waltereit@iaf.fraunhofer.de
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Abstract

We present an overview on epitaxial growth, processing technology, device performance, and reliability of our GaN high electron mobility transistors (HEMTs) manufactured on 3- and 4-in. SiC substrates. Epitaxy and processing are optimized for both performance and reliability. We use three different gate lengths, namely 500 nm for 1–6 GHz applications, 250 nm for devices between 6 and 18 GHz, and 150 nm for higher frequencies. The developed HEMTs demonstrate excellent high-voltage stability, high power performance, and large DC to RF conversion efficiencies for all gate lengths. On large gate width devices for base station applications, an output power beyond 125 W is achieved with a power added efficiency around 60% and a linear gain around 16 dB. Reliability is tested both under DC and RF conditions with supply voltage of 50 and 30 V for 500 and 250 nm gates, respectively. DC tests on HEMT devices return a drain current change of just about 10% under IDQ conditions. Under RF stress the observed change in output power density is below 0.2 dB after more than 1000 h for both gate length technologies.

Keywords

GaNHEMTMMICPAEReproducibilityHomogeneityReliability
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 3 - 11
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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