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Design of a broadband high-efficiency power amplifier based on a rectangular double transmission line structure

Published online by Cambridge University Press:  02 July 2024

Luyu Zhang
Affiliation:
The School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Zhiwei Zhang*
Affiliation:
The School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Chenlu Wang
Affiliation:
The School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Chao Gu
Affiliation:
The ECIT Institute, Queen’s University Belfast, Belfast, UK
*
Corresponding author: Zhiwei Zhang; Email: 2361051379@qq.com

Abstract

This paper presents a design methodology for a broadband high-efficiency power amplifier (PA). The large available impedance space of the extended continuous Class-GF mode is employed. A novel output matching network of the PA consisting of a rectangular double transmission line structure is proposed to meet impedance requirements. To validate the effectiveness of this structure, a high-efficiency PA operating in 0.8–3.0 GHz is designed using a CGH40010F GaN transistor. The measured results demonstrate that the drain efficiency falls within the range of 63.2%–71.9%, the output power varies from 40.2 to 42.2 dBm, and the gain ranges from 9.4 to 11.3 dB within the frequency band of 0.8–3 GHz. The realized PA exhibits an extremely competitive relative bandwidth of 115.8%.

Type
Research Paper
Copyright
© The Author(s), 2024. Published by Cambridge University Press in association with The European Microwave Association.

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