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Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

Published online by Cambridge University Press:  21 February 2011

Hiroshi Otsuka ,
Toshiyuki Oishi ,
Koji Yamanaka ,
Mattias Thorsell ,
Kristoffer Andersson ,
Akira Inoue ,
Yoshihito Hirano  and
Iltcho Angelov
Hiroshi Otsuka*
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Toshiyuki Oishi
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Koji Yamanaka
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Mattias Thorsell
Affiliation:
Department of Microtechnology and Nanoscience (MC2), Microwave Electrics Laboratory, GHz Centre, Chalmers University of Technology, Gothenburg SE-41296, Gothenburg, Sweden.
Kristoffer Andersson
Affiliation:
Department of Microtechnology and Nanoscience (MC2), Microwave Electrics Laboratory, GHz Centre, Chalmers University of Technology, Gothenburg SE-41296, Gothenburg, Sweden.
Akira Inoue
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Yoshihito Hirano
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Iltcho Angelov
Affiliation:
Department of Microtechnology and Nanoscience (MC2), Microwave Electrics Laboratory, GHz Centre, Chalmers University of Technology, Gothenburg SE-41296, Gothenburg, Sweden.
*
Corresponding author: H. Otsuka Email: Otsuka.Hiroshi@bc.MitsubishiElectric.co.jp
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Abstract

A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure. The physical equations are used for the construction of the model in order to connect strongly the model parameters with the device/physical parameters. Hyperbolic tangent functions are used as the model equations to ensure good model convergence and rapid simulation (short simulation time). The usefulness of these equations is confirmed by technology computer aided design (TCAD) simulation. The number of model parameters for the nonlinear components (Ids, Cgs, Cgd) is reduced to 17 by using common physical parameters for modeling the drain current and capacitance. The accuracy of this model is verified by applying to GaN HEMTs. The modeled I–V and capacitance characteristics agree well with the measurement data over a wide voltage range. Furthermore, this model can be used for the accurate evaluation of S-parameters and large-signal RF characteristics.

Keywords

Transistor modelsGaN HEMTSimulationPower amplifiersPhysical modelingMicrowave
Type
Research Article
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Issue 1 , February 2011 , pp. 25 - 33
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

REFERENCES

[1]Ohtsuka, H. et al. : Over 57% efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits, in 2008 IEEE MTT-S Int. Microwave Symp. Dig. WE1E-03, June 2008.CrossRefGoogle Scholar
[2]Mishra, U.K.: GaN-Based RF power devices and amplifiers. Proc. IEEE, 96 (2) (2008), 287–305.CrossRefGoogle Scholar
[3]Okamoto, Y.; Wakejima, A.; Ando, Y.; Nakayama, T.; Matsunaga, K.; Miyamoto, H.: 100W C-band single-chip GaN FET power amplifier. Electron. Lett., 42 (5) (2006), 283–285.CrossRefGoogle Scholar
[4]Shigematsu, H. et al. : C-band-340-W and X-band 100-W GaN power amplifiers with over 50% PAE, in 2009 IEEE MTT-S Int. Microwave Symp. Dig. TH3A-1, June 2009.CrossRefGoogle Scholar
[5]Takagi, K. et al. : Ku-band, AlGaN/GaN-HEMT with over 30% of PAE, in 2009 IEEE MTT-S Int. Microwave Symp. Dig. WE1C-4, June 2009.CrossRefGoogle Scholar
[6]Curtice, W.R.; Ettenberg, M.: A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers. IEEE Trans. Microw. Theory Tech., MTT-33 (12) (1985), 1383–1394.CrossRefGoogle Scholar
[7]Angelov, I.; Bengtsson, L.; Garcia, M.: Extensions of the Chalmers nonlinear HEMT and MESFET model. IEEE Trans. Microw. Theory Tech., 44 (10) (1996), 1664–1674.CrossRefGoogle Scholar
[8]Angelov, I. et al. : Large-signal modeling and comparison of AlGaN/GaN HEMTs and SiC MESFETs, in Proc. of Asia-Pacific Microwave Conf. (APMC) 2006, WE4B-1, December 2006.CrossRefGoogle Scholar
[9]Deng, J. et al. : Temperature-dependent RF large-signal model of GaN-based MOSFETs. IEEE Trans. Microw. Theory Tech., MTT-56 (12) (2008), 2709–2716.CrossRefGoogle Scholar
[10]Pedro, J.C.: A physics-based MESFET empirical model, in 1994 IEEE MTT-S Int. Microwave Symp. Dig. WE3F-14, May 1994.Google Scholar
[11]Li, M.; Wang, Y.: 2-D analytical model for current–voltage characteristics and transconductance of AlGaN/GaN MODFETs. IEEE Trans. Electron Devices, ED-55 (1) (2008), 261–267.CrossRefGoogle Scholar
[12]Koudymov, A. et al. : Analytical HFET I–V model in presence of current collapse. IEEE Trans. Electron Devices, ED-55 (3) (2008), 712–720.CrossRefGoogle Scholar
[13]Staudinger, J.; Golio, M.; Woodin, C.; de Baca, M.C.: Considerations for improving the accuracy of large-signal GaAs MESFET models to predict power amplifier circuit performance. IEEE J. Solid-state Circuit, SSC-29 (3) (1994), 366–373.CrossRefGoogle Scholar
[14]Suita, M.; Nanjo, T.; Oishi, T.; Abe, Y.; Tokuda, Y.: Ion implantation doping for AlGaN/GaN HEMTs. Phys. Stat. Sol. (c), 3 (6) (2006), 2364–2367.Google Scholar
[15]Roblin, P.; Kang, S.C.; Morkoc, H.: Analytic solution of the velocity-saturated MOSFET/MODFET wave equation and its application to the prediction of the microwave characteristics of MODFETs. IEEE Trans. Electron Devices, ED-37 (7) (1990), 1608–1622.CrossRefGoogle Scholar
[16]Roblin, P.; Rohdin, H.; Hung, C.J.; Chiu, S-W.: Capacitance–voltage analysis and current modeling of pulse-doped MODFETs. IEEE Trans. Electron Devices, ED-36 (11) (1989), 2394–3404.CrossRefGoogle Scholar
[17]Golio, M.: Microwave MESFETs and HEMTs. Artech, (1991), 152–170.Google Scholar
[18]Ishihara, N.; Shimizu, T.: A simple equation model for RF MOS FET, Silicon Monolithic Integrated Circuits in RF Systems, 2006, Digest of Papers, 2006 Topical Meeting, 18–20 January San Diego, CA, 2006, 93–96.Google Scholar
[19]Device Simulator Atlas Ver. 5.16.3.R. Atlas User's Manual, Silvaco Int., Santa Clara, CA, 2010.Google Scholar
[20]Chavarkar, P.; Mishra, U.: Field effect transistors: FETs and HEMTs. Thin Films, 28 (2001), 71–145.Google Scholar
[21]Yin, H.: A physics-based large-signal analytical model for AlGaN/GaN HFETs, Dissertation, North Carolina State University, 2008.Google Scholar
[22]Dambrine, G.; Cappy, A.; Helidore, F.; Playes, E.: A new method of determining the FET small-signal equivalent circuit. IEEE Trans. Microw. Theory Tech., 36 (7) (1988), 1151–1159.CrossRefGoogle Scholar