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Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz

Published online by Cambridge University Press:  11 June 2013

Aritra Acharyya ,
Jit Chakraborty ,
Kausik Das ,
Subir Datta ,
Pritam De ,
Suranjana Banerjee  and
J.P. Banerjee
Aritra Acharyya*
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721
Jit Chakraborty
Affiliation:
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
Kausik Das
Affiliation:
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
Subir Datta
Affiliation:
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
Pritam De
Affiliation:
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
Suranjana Banerjee
Affiliation:
Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly, West Bengal 712121, India
J.P. Banerjee
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721
*
Corresponding author: A. Acharyya Email: ari_besu@yahoo.co.in
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Abstract

Large-signal (L-S) characterization of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on silicon designed to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies up to 0.5 THz is carried out in this paper using an L-S simulation method developed by the authors based on non-sinusoidal voltage excitation (NSVE) model. L-S simulation results show that the device is capable of delivering peak RF power of 657.64 mW with 8.25% conversion efficiency at 94 GHz for 50% voltage modulation; whereas RF power output and efficiency reduce to 89.61 mW and 2.22% respectively at 0.5 THz for same voltage modulation. Effect of parasitic series resistance on the L-S properties of DDR Si IMPATTs is also investigated, which shows that the decrease in RF power output and conversion efficiency of the device due to series resistance is more pronounced at higher frequencies especially at the THz regime. The NSVE L-S simulation results are compared with well established double-iterative field maximum (DEFM) small-signal (S-S) simulation results and finally both are compared with the experimental results. The comparative study shows that the proposed NSVE L-S simulation results are in closer agreement with experimental results as compared to those of DEFM S-S simulation.

Keywords

Avalanche response timeDDR silicon IMPATTsLarge-signal simulationMillimeter-waveThermal designTerahertz regime
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Issue 5 , October 2013 , pp. 567 - 578
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

REFERENCES

[1]Midford, T.A.; Bernick, R.L.: Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans. Microw. Theory Tech., 27 (1979), 483–492.Google Scholar
[2]Chang, Y.; Hellum, J.M.; Paul, J.A.; Weller, K.P.: Millimeter-wave IMPATT sources for communication applications. IEEE MTT-S Int. Microw. Symp. Dig., (1977), 216–219.Google Scholar
[3]Gray, W.W.; Kikushima, L.; Morentc, N.P.; Wagner, R.J.: Applying IMPATT power sources to modern microwave systems. IEEE J. Solid-State Circuits, 4 (1969), 409–413.CrossRefGoogle Scholar
[4]Miswa, T.: Negative resistance in p–n junctions under avalanche breakdown conditions. IEEE Trans. Electron Devices, 33 (1966), 137–151.Google Scholar
[5]Gilden, M.; Hines, M.E.: Electronic tuning effects in the read microwave avalanche diode. IEEE Trans. Electron Devices, 13 (1966), 169–175.Google Scholar
[6]Gummel, H.K.; Scharfetter, D.L.: Avalanche region of IMPATT diodes. Bell Sys. Tech. J., 45 (1966), 1797–1827.Google Scholar
[7]Roy, S.K.; Sridharan, M.; Ghosh, R.; Pal, B.B.: Computer method for the dc field and carrier current profiles in the IMPATT device starting from the field extremum in the depletion layer, in Proc. 1st Conf. on Numerical Analysis of Semiconductor Devices (NASECODE I), Miller, J. H., Ed., Dublin, Ireland, 1979, 266–274.Google Scholar
[8]Roy, S.K.; Banerjee, J.P.; Pati, S.P.: A Computer analysis of the distribution of high frequency negative resistance in the depletion layer of IMPATT Diodes, in Proc. 4th Conf. on Numerical Analysis of Semiconductor Devices (NASECODE IV), Dublin, Ireland, 1985, 494–500.Google Scholar
[9]Acharyya, A.; Banerjee, S.; Banerjee, J.P.: Dependence of DC and small-signal properties of double drift region silicon IMPATT device on junction temperature. J. Electron Devices, 12 (2012), 725–729.Google Scholar
[10]Acharyya, A.; Mukherjee, M.; Banerjee, J.P.: Influence of tunnel current on DC and dynamic properties of silicon based Terahertz IMPATT source. Terahertz Sci. Technol., 4 (2011), 26–41.Google Scholar
[11]Acharyya, A.; Banerjee, S.; Banerjee, J.P.: Effect of package parasitics on the millimeter-wave performance of DDR silicon IMPATT device operating at W-band. J. Electron Devices, 13 (2012), 960–964.Google Scholar
[12]Acharyya, A.; Banerjee, J.P.: Design and optimization of pulsed mode silicon based DDR IMPATT diode operating at 0.3 THz. Int. J. Eng. Sci. Technol., 3 (2011), 332–339.Google Scholar
[13]Gummel, H.K.; Blue, J.L.: A small-signal theory of avalanche noise in IMPATT diodes. IEEE Trans. Electron Devices, 14 (1967), 569–580.Google Scholar
[14]Evans, W.J.; Haddad, G.I.: A large-signal analysis of IMPATT diodes. IEEE Trans. Electron Devices, 15 (1968), 708–717.Google Scholar
[15]Scharfetter, D.L.; Gummel, H.K.: Large-signal analysis of a silicon read diode oscillator. IEEE Trans. Electron Devices, 6 (1969), 64–77.Google Scholar
[16]Gupta, M.S.; Lomax, R.J.: A current-excited large-signal analysis of IMPATT devices and its circuit implementations. IEEE Trans. Electron Devices, 20 (1973), 395–399.Google Scholar
[17]Acharyya, A.; Banerjee, J.P.: Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources. Appl. Nanosci., (2012), 1–4. DOI: 10.1007/s13204-012-0172-y.Google Scholar
[18]Acharyya, A.; Banerjee, J.P.: Potentiality of IMPATT devices as terahertz source: an avalanche response time based approach to determine the upper cut-off frequency limits. IETE J. Res., 59 (2013), in press.Google Scholar
[19]Acharyya, A.; Banerjee, S.; Banerjee, J.P.: Calculation of avalanche response time for determining the high frequency Performance limitations of IMPATT devices. J. Electron Devices, 12 (2012), 756–760.Google Scholar
[20]Acharyya, A.; Banerjee, J.P.: Analysis of photo-irradiated double-drift region silicon impact avalanche transit Time devices in the millimeter-wave and terahertz regime. Terahertz Sci. Technol., 5 (2012), 97–113.Google Scholar
[21]Acharyya, A.; Banerjee, S.; Banerjee, J.P.: Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device. J. Semicond., 34 (2013), 024001–12.Google Scholar
[22]Acharyya, A.; Banerjee, S.; Banerjee, J.P.: Large-signal simulation of 94 GHz pulsed DDR silicon IMPATTs including the temperature transient effect. Radioengineering, 21 (2012), 1218–1225.Google Scholar
[23]Acharyya, A.; Banerjee, S.; Banerjee, J.P.: A proposed simulation technique to study the series resistance and Related millimeter-wave properties of Ka-Band Si IMPATTs from the electric field snap-shots. Int. Jo. Microw. Wirel. Technol., 5 (2013), 91–100.Google Scholar
[24]Sze, S.M.; Ryder, R.M.: Microwave avalanche diodes. Proc. IEEE, Special Issue on Microw. Semicond. Devices, 59 (1971), 1140–1154.Google Scholar
[25]Grant, W.N.: Electron and hole ionization rates in epitaxial Silicon. Solid State Electron, 16 (1973), 1189–1203.CrossRefGoogle Scholar
[26]Canali, C.; Ottaviani, G.; Quaranta, A.A.: Drift velocity of electrons and holes and associated anisotropic effects in silicon. J. Phys. Chem. Solids, 32 (1971), 1707.Google Scholar
[27]Zeghbroeck, B.V.: Principles of Semiconductor Devices, Colorado Press, USA, 2011.Google Scholar
[28]Electronic Archive: New Semiconductor Materials, Characteristics and Properties (2013) http://www.ioffe.ru/SVA/NSM/Semicond/Si/index.htmlGoogle Scholar
[29]Acharyya, A.; Mukherjee, J.; Mukherjee, M.; Banerjee, J.P.: Heat sink design for IMPATT diode sources with different base materials operating at 94 GHz. Arch. Phys. Res., 2 (2011), 107–126.Google Scholar
[30]Acharyya, A.; Pal, B.; Banerjee, J.P.: Temperature distribution inside Semi-Infinite Heat Sinks for IMPATT sources. Int. J. Eng. Sci. Technol., 2 (2010), 5142–5149.Google Scholar
[31]Thermal Conductivity of the Elements (2013) http://periodictable.com/Properties/A/ThermalConductivity.v.log.htmlGoogle Scholar
[32]Kurokawa, K.: Some basic characteristics to broadband negative resistance oscillators. Bell Syst. Tech. J., 48 (1969), 1937–1955.Google Scholar
[33]Luy, J.F.; Casel, A.; Behr, W.; Kasper, E.: A 90-GHz double-drift IMPATT diode made with Si MBE. IEEE Trans. Electron Devices, 34 (1987), 1084–1089.Google Scholar
[34]Wollitzer, M.; Buchler, J.; Schafflr, F.; Luy, J.F.: D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz. Electron. Lett., 32 (1996), 122–123.Google Scholar