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Large-signal modeling of large-size GaN HEMTs with a comprehensive extrinsic elements extraction algorithm

Published online by Cambridge University Press:  23 March 2010

J. Alberto Zamudio-Flores ,
Samir Dahmani  and
Günter Kompa
J. Alberto Zamudio-Flores*
Affiliation:
FG Mikrowellenelektronik, University of Kassel, Wilhelmshoeher Allee 73, Kassel D-34121, Germany.
Samir Dahmani
Affiliation:
FG Mikrowellenelektronik, University of Kassel, Wilhelmshoeher Allee 73, Kassel D-34121, Germany.
Günter Kompa
Affiliation:
FG Mikrowellenelektronik, University of Kassel, Wilhelmshoeher Allee 73, Kassel D-34121, Germany.
*
Corresponding author: J. Alberto Zamudio-Flores Email: zamudio@uni-kassel.de
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Abstract

This work presents a measurement-based physics-oriented large-signal modeling technique for GaN HEMTs. All the model elements are derived directly from pulsed-DC measurements and bias dependent small-signal model elements. The proposed small-signal model features a 12-element extrinsic network, which allows proper modeling of the complex parasitic effects present in large gate-width devices. A reliable generally applicable extrinsic extraction algorithm is presented. It is based on pinch-off S-parameter measurements and on a scanning procedure to find the optimal capacitance distribution. Results of applying the algorithm with measured data of a GaN HEMT with gate width of 3.2-mm prove the consistency of the formulation. Successful model verification is shown under pulsed-DC, single- and two-tone operations, showing accurate predictions versus measurements of IDS, Pout, gain, harmonics and IMD products.

Keywords

Gallium nitrideHigh electron-mobility transistor (HEMT)Nonlinear modelingSmall-signal modelingHigh-power devices
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 63 - 73
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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