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Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1–4 GHz range

Published online by Cambridge University Press:  09 June 2014

Chamssedine Berrached ,
Diane Bouw ,
Marc Camiade ,
Kassem El-Akhdar ,
Denis Barataud  and
Guillaume Neveux
Chamssedine Berrached
Affiliation:
UMS, Parc Silic de Villebon-Courtaboeuf, 10 Avenue du Québec, 91140 Villebon-sur-Yvette, France. Phone: +335 554 577 53 XLIM – UMR 7252, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Diane Bouw
Affiliation:
UMS, Parc Silic de Villebon-Courtaboeuf, 10 Avenue du Québec, 91140 Villebon-sur-Yvette, France. Phone: +335 554 577 53
Marc Camiade
Affiliation:
UMS, Parc Silic de Villebon-Courtaboeuf, 10 Avenue du Québec, 91140 Villebon-sur-Yvette, France. Phone: +335 554 577 53
Kassem El-Akhdar
Affiliation:
XLIM – UMR 7252, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Denis Barataud*
Affiliation:
XLIM – UMR 7252, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Guillaume Neveux
Affiliation:
XLIM – UMR 7252, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
*
Corresponding author: D. Barataud Email: denis.barataud@xlim.fr
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Abstract

In this paper, the designs and experimental performances of wideband (higher than one octave) high-efficiency, high-power amplifiers (HPA) working in the 1–4 GHz range, using the same GaN process, are presented. They are based on the Bode–Fano integrals, which can be applied to a trade-off calculation between bandwidth and efficiency. Firstly, an microwave intregrated circuits (MIC) wideband HPA, externally matched, is presented. It generates a continuous wave (CW) output power (Pout) greater than 40 W, a power gain (GP) higher than 9.2 dB and a corresponding power added efficiency (PAE) (drain efficiency (DE)) ranged between 36 and 44% (40 and 48%) over the 1–3 GHz bandwidth. Two other amplifiers have been designed upon the same theoretical methodology, with a passive GaAs MMIC circuit technology, enabling to reduce the final size down to 420 mm2. The first internally matched Quasi monolithic microwave intergrated circuits (Quasi-MMIC) single-ended HPA generates a pulsed Pout greater than 25 W, GP higher than 9.8 dB, and a corresponding PAE (DE) ranged between 37 and 52.5% (40 and 55%) over the 2–4 GHz bandwidth. The second internally matched Quasi-MMIC HPA, based on balanced architecture, generates a pulsed Pout higher than 45 W, GP higher than 9.5 dB and PAE (DE) ranged between 33 and 44% (38 and 50%) over the 2–4 GHz bandwidth. These results are among the best ones published in terms of PAE and Pout in instantaneous octave bandwidth in the 1–4 GHz frequency range.

Keywords

High-power amplifierHEMT GaNMICQuasi-MMICWidebandHigh efficiency
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 7 , Issue 1 , February 2015 , pp. 1 - 12
Copyright
Copyright © Published by Cambridge University Press 2014 

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