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Amorphous carbon antireflective coatings in the 10 to 50 μm region of the far-IR

Published online by Cambridge University Press:  03 March 2011

Serhat Metin ,
James H. Kaufman ,
David D. Saperstein ,
Campbell J. Scott ,
James Heyman  and
Eugene E. Haller
Serhat Metin
Affiliation:
Department of Materials Science and Minerals Engineering, University of California at Berkeley, Berkeley, California 94720 and IBM/AdStaR, 5600 Cottle Road, San Jose, California 95193
James H. Kaufman
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120
David D. Saperstein
Affiliation:
IBM/AdStaR, 5600 Cottle Road, San Jose, California 95193
Campbell J. Scott
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120
James Heyman
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley, California 94720
Eugene E. Haller
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley, California 94720
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Abstract

The efficiency of far-IR germanium photoconductive detectors can be markedly improved by antireflective coatings. Recently, there has been an effort to develop several micrometer thick, low stress, amorphous carbon films for this purpose. To date, films of no more than 1 to 2 μm have been reported in the literature. In this paper we report the deposition of low stress carbon films which are over 5 μm thick and are effective antireflective coatings at wavelengths of up to Λ = 43 μm. Minimal stress, a requirement for good adhesion, was achieved with a chemical vapor deposition process (CVD) by controlling the hydrocarbon partial pressure (2.2 mTorr) and by doping the carbon film with nitrogen.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 2 , February 1994 , pp. 396 - 400
Copyright
Copyright © Materials Research Society 1994

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References

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