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Analytical investigation of the simultaneous internal gettering of iron and nickel in silicon

Published online by Cambridge University Press:  31 January 2011

P.K. Sinha ,
W.S. Glaunsinger  and
Ray-Chern Deng
P.K. Sinha
Affiliation:
Department of Chemical, Bio, and Materials Engineering, Arizona State University, Tempe, Arizona 85287-1604
W.S. Glaunsinger
Affiliation:
Department of Chemistry, Arizona State University, Tempe, Arizona 85287-1604
Ray-Chern Deng
Affiliation:
Department of Chemistry, Arizona State University, Tempe, Arizona 85287-1604
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Abstract

The simultaneous gettering of iron and nickel in a float-zone silicon wafer in the (100) orientation and implanted with 2.5 ⊠ 1015 argon ions/cm2 at 280 keV has been investigated. Iron was deposited on one half of the back surface of the wafer and nickel was deposited on the other half. Chemical analyses by secondary ion mass spectroscopy, energy dispersive x-ray spectroscopy, and high-resolution imaging by high-resolution electron microscopy revealed the gettering rate of iron was orders of magnitude lower than that of nickel. The results also suggested that gettering is a metal-diffusion-controlled process. The simultaneous gettering of iron and nickel results in a complex distribution of the two metals in the silicon wafer.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 5 , May 1990 , pp. 1017 - 1022
Copyright
Copyright © Materials Research Society 1990

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References

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