Hostname: page-component-5c6d5d7d68-thh2z Total loading time: 0 Render date: 2024-08-08T21:28:12.403Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of the bond valence method to Si/NiSi2 interfaces

Published online by Cambridge University Press:  31 January 2011

M. O'Keeffe
M. O'Keeffe
Affiliation:
Department of Chemistry, Arizona State University, Tempe, Arizona 85287
Get access

Abstract

It is shown how the bond valence method can be used to estimate expected interatomic distances in coherent interfaces. The method is illustrated by application to the Si/NiSi2 (111) interface with results generally in accord with experimental data.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 11 , November 1991 , pp. 2371 - 2374
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.O'Keeffe, M., Acta Crystallogr. A 46, 138 (1990).CrossRefGoogle Scholar
2.Derrien, J., in Semiconductor Interfaces: Formation and Properties, edited by LeLay, G., Derrien, J., and Boccara, N. (Springer-Verlag, Berlin, 1987).Google Scholar
3.Brown, I. D., in Structure and Bonding in Crystals, edited by O'Keeffe, M. and Navrotsky, A. (Academic Press, New York, 1981).Google Scholar
4.Brown, I. D. and Altermatt, D., Acta Crystallogr. B 41, 244 (1985).CrossRefGoogle Scholar
5.Brown, I. D., Acta Crystallogr. B 33, 1305 (1977).CrossRefGoogle Scholar
6.O'Keeffe, M., Structure and Bonding 71, 161 (1989).CrossRefGoogle Scholar
7.Brese, N. E. and O'Keeffe, M., Acta Crystallogr. B 47, 192 (1991).CrossRefGoogle Scholar
8.O'Keeffe, M. and Brese, N. E., J. Am. Chem. Soc. 113, 3226 (1991).CrossRefGoogle Scholar
9.Hamann, D. R., Phys. Rev. Lett. 60, 313 (1988).CrossRefGoogle Scholar
10.Loenen, E. J. van, Frenken, J. W. M., Veen, J. F. van der, and Valeri, S., Phys. Rev. Lett. 54, 827 (1985).CrossRefGoogle Scholar
11.Vlieg, E., Fischer, A. E. M. J., van der Veen, J. F., Dev, B. N., and Materlik, G., Surf. Sci. 178, 36 (1986).CrossRefGoogle Scholar
12.Fischer, A. E. M. J., Vlieg, E., van der Veen, J. F., Clausnitzer, M., and Materlik, G., Phys. Rev. B 36, 4769 (1987).CrossRefGoogle Scholar
13.Zegenhagen, J., Huang, K. G., Hunt, B. D., and Schowalter, L. J., Appl. Phys. Lett. 51, 1176 (1987).CrossRefGoogle Scholar
14.Rossi, G., Jin, X., Santaniello, A., DePadova, P., and Chandris, D., Phys. Rev. Lett. 62, 191 (1989).CrossRefGoogle Scholar
15.d'Anterroches, C., Surf. Sci. 168, 751 (1986).CrossRefGoogle Scholar
16.Gibson, J. M., Batstone, J. L., Tung, R. T., and Unterwald, F. C., Phys. Rev. Lett. 60, 1158 (1988).CrossRefGoogle Scholar
17.Gibson, J. M. and Batstone, J. L., Surf. Sci. 208, 317 (1989).CrossRefGoogle Scholar
18.Cherns, D., Anstis, G. R., Hutchinson, J. L., and Spence, J. C. H., Philos. Mag. A 46, 849 (1982).CrossRefGoogle Scholar
19.Rossi, G., Jin, X., Santaniello, A., DePadova, P., and Chandris, D., Phys. Rev. Lett. 62, 191 (1989).CrossRefGoogle Scholar