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Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

Published online by Cambridge University Press:  31 January 2011

Joshua N. Musher  and
Roy G. Gordon
Joshua N. Musher
Affiliation:
Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
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Abstract

Near stoichiometric titanium nitride (TiN) was deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia using atmospheric pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments provided kinetic data and continuous operation uniformly coated 150-mm substrates. Growth rate, stoichiometry, and resistivity are examined as functions of deposition temperature (190−420 °C), ammonia flow relative to TDMAT (0−30), and total gas-flow rate (residence time 0.3−0.6 s). Films were characterized by sheet resistance measurements, Rutherford Backscattering Spectrometry, and X-Ray Photoelectron Spectrometry. Films deposited without ammonia were substoichiometric (N/Ti, 0.6−0.75), contained high levels of carbon (C/Ti = 0.25−0.40) and oxygen (O/Ti = 0.6−0.9), and grew slowly. Small amounts of ammonia (NH3/TDMAT ≥ 1) brought impurity levels down to C/Ti, 0.1 and O/Ti = 0.3−0.5. Ammonia increased the growth rates by a factor of 4−12 at temperatures below 400 °C. Films 500 Å thick had resistivities as low as 1600 μΩ-cm when deposited at 280 °C and 1500 μΩ-cm when deposited at 370 °C. Scanning electron micrographs indicate a smooth surface and poor step coverage for films deposited with high ammonia concentrations.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 4 , April 1996 , pp. 989 - 1001
Copyright
Copyright © Materials Research Society 1996

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