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Autostoichiometric vapor deposition: Part II. Experiment

Published online by Cambridge University Press:  03 March 2011

Kueir Weei Chour  and
Ren Xu
Kueir Weei Chour
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
Ren Xu
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
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Abstract

An autostoichiometric vapor deposition method is implemented to achieve deposition of stoichiometric LiTaO3 using LiTa(OButn)6 precursor. Precisely stoichiometric LiTaO3 can be grown by this method. A simple low pressure reactor is used to facilitate the autostoichiometric vapor deposition through hydrolysis polycondensation of double alkoxides in the vapor phase. Typical deposition and annealing conditions are described. X-ray diffraction, SEM, and compositional analyses are performed on the films grown on fused silica, Pt, (100) sapphire, and LiNbO3(001). Rocking curve measurements indicated excellent epitaxial growth of LiTaO3 on (100) sapphire. Compositional analysis by measurement of lattice parameters confirmed that the present method can produce high quality stoichiometric LiTaO3. The nonstoichiometry factor for LiTa(OButn)6 is negligible. Mass spectrometric study of the precursor compound LiTa(OButn)6 suggests that the volatile species is Li2Ta2(OButn)12.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 10 , October 1995 , pp. 2542 - 2547
Copyright
Copyright © Materials Research Society 1995

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References

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