Hostname: page-component-84b7d79bbc-rnpqb Total loading time: 0 Render date: 2024-08-03T22:49:47.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical reactions at the Au/InP interface

Published online by Cambridge University Press:  29 June 2016

C. Thomas Tsai  and
R.Stanley Williams
C. Thomas Tsai
Affiliation:
Department of Chemistry and Biochemistry and Solid State Sciences Center, University of California, Los Angeles, California 90024
R.Stanley Williams
Affiliation:
Department of Chemistry and Biochemistry and Solid State Sciences Center, University of California, Los Angeles, California 90024
Get access

Abstract

Chemical reactions at the Au/InP interface were investigated in the temperature range 25°-510 °C by x-ray diffractometry, scanning electron microscopy (SEM), and energy dispersive x-ray analysis. The samples were prepared by depositing gold films onto clean InP (100) single-crystal substrates under 10∼9 Torr vacuum. Spots appeared in SEM micrographs of the deposited film of a sample annealed at room temperature for 35 days, indicating that a solid-state reaction had occurred. After the sample was heated to 330 °C under flowing N2 gas, £1 dendritic islands were observed in the film. A 365 °C anneal turned the color of the Au film from yellow to pink, and Au, £1 and Au2P3 were identified by x-ray diffractometry. In reacting with the InP substrate, £1 produced silver-colored γ and more Au2P3 at 450 ° C. With respect to InP, γ was relatively stable, and further reactions were minimal even when the sample was annealed at 510 °C for 40 min under atmospheric-pressure N2. The ternary phase diagram for the bulk Au-In-P system provides the basis for understanding the sequence of the above results and much of the information in the literature about Au/InP interfacial reactions.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 6 , December 1986 , pp. 820 - 826
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Kim, H. B., Lovas, A. F., Sweeney, G. G., and Heng, T. M. S., Inst. Phys. Conf. Ser. B 33, 145 (1977).Google Scholar
2Williams, R. H., Varma, R. R., and McKinley, A., J. Phys. C 10, 4545 (1977).Google Scholar
3Hiraki, A., Shuto, K., Kim, S., Kammura, W., and Iwami, M., Appl. Phys. Lett. 31, 611 (1977).CrossRefGoogle Scholar
4Tuck, B., Ip, K. T., and Eastman, L. F., Thin Solid Films 55, 41 (1978).CrossRefGoogle Scholar
5Szydlo, N. and Olivier, J., J. Appl. Phys. 50, 1445 (1979).CrossRefGoogle Scholar
6Chye, P. W., Lindau, I., Pianetta, P., Garner, C. M., Su, C. Y., and Spicer, W. E., Phys. Rev. B 18, 5545 (1978).CrossRefGoogle Scholar
7Farrow, R. F. C., Cullis, A. G., Grant, A. J., and Pattison, J. E., J. Cryst. Growth 45, 292 (1978).CrossRefGoogle Scholar
8Farrow, R. F., Cullis, A. G., Grant, A. J., and Jones, G. R., Thin Solid Films 58, 189 (1979).CrossRefGoogle Scholar
9Keramidas, V. G., Temkin, H., and Mahajan, S., Inst. Phys. Conf. Ser. 56, 293 (1980).Google Scholar
10Piotrowska, A., Auvray, P., Guivarc'h, A., Pelous, G., and Henoc, P., J. Appl. Phys. 52, 5112(1981).Google Scholar
11Barnes, P. A. and Williams, R. S., Solid-State Electron. 24, 907 (1981).CrossRefGoogle Scholar
12Brillson, L. J., Brucker, C. F., Katnani, A. D., Stoffel, N. G., and Margaritondo, G., J. Vac. Sci. Technol. 19, 661 (1981).CrossRefGoogle Scholar
13Camlibel, I., Chin, A. K., Ermanis, F., DiGiuseppe, M. A., Lour- enco, J. A., and Bonner, W. A., J. Electrochem. Soc. 129, 2586 (1982).CrossRefGoogle Scholar
14Vandenberg, J. M., Temkin, H., Hamm, R. A., and DiGiuseppe, M. A., J. Appl. Phys. 53, 7385 (1982); Thin Solid Films 104, 419 (1983).CrossRefGoogle Scholar
15Brasen, D., Karlicek, R. F., and Donnelly, V. M., J. Electrochem. Soc. 130, 1473 (1983).CrossRefGoogle Scholar
16Mojzes, I., Szigethy, D., and Veresegyhazy, R., Electr. Lett. 19, 117 (1983).CrossRefGoogle Scholar
17Petro, W. G., Kendelewicz, T., Babalola, I. A., Lindau, I., and Spicer, W. E., J. Vac. Sci. Technol. A 2, 835 (1984).CrossRefGoogle Scholar
18Hiscocks, S. E. R. and Hume-Rothery, W., Proc. R. Soc. London Ser. A 282, 318 (1964).Google Scholar
19Kleppa, O. J., J. Phys. Chem. 60, 858 (1956).CrossRefGoogle Scholar
20Pugh, J. H. and Williams, R. S., J. Mater. Res. 1, 343 (1986).CrossRefGoogle Scholar
21Tsai, C. T. and Williams, R. S., J. Mater. Res. 1, 352 (1986).Google Scholar
22Tsai, C. T., Pugh, J. H., and Williams, R. S., to be published.Google Scholar
23McGilp, J. F., J. Phys. C 17, 2249 (1984).CrossRefGoogle Scholar
24Lupis, C. H. P., in Chemical Thermodynamics of Materials (North-Holland, New York, 1983), pp. 21–23.Google Scholar