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Control of crystallization and crystal orientation of alkoxy-derived SrBi2Ta2O9 thin films by ultraviolet irradiation

Published online by Cambridge University Press:  06 January 2012

Kaori Nishizawa ,
Takeshi Miki ,
Kazuyuki Suzuki  and
Kazumi Kato
Kaori Nishizawa
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, 463–8560, Japan
Takeshi Miki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, 463–8560, Japan
Kazuyuki Suzuki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, 463–8560, Japan
Kazumi Kato
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, 463–8560, Japan
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Abstract

A 650 °C annealed thin film was found to be a single phase of SrBi2Ta2O9 (SBT) and showed the c-axis orientation without ultraviolet irradiation. The crystallinity and crystal orientation of the thin films were improved by ultraviolet irradiation using an ultrahigh-pressure mercury lamp (UHPML) or a low-pressure mercury lamp (LPML) under three conditions. In particular, the crystal orientation of the 650 °C annealed thin films dramatically changed by ultraviolet irradiation using a LPML at room temperature or using an UHPML at 150 °C. The 650 °C annealed SBT thin film prepared by ultraviolet irradiation using an UHPML at 150 °C showed a remanent polarization (Pr) of 4.3 μC/cm2 and a coercive electric field (Ec) of 101 kV/cm at 10 V.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 4 , April 2003 , pp. 899 - 907
Copyright
Copyright © Materials Research Society 2003

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