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Controlled Planar Interface Synthesis by Ultrahigh Vacuum Diffusion Bonding/deposition

Published online by Cambridge University Press:  31 January 2011

M. J. Kim ,
R. W. Carpenter ,
M. J. Cox  and
J. Xu
M. J. Kim
Affiliation:
Center for Solid State Science, Science and Engineering of Materials, Arizona State University, Tempe, Arizona 85287–1704
R. W. Carpenter
Affiliation:
Center for Solid State Science, Science and Engineering of Materials, Arizona State University, Tempe, Arizona 85287–1704
M. J. Cox
Affiliation:
Center for Solid State Science, Science and Engineering of Materials, Arizona State University, Tempe, Arizona 85287–1704
J. Xu
Affiliation:
Center for Solid State Science, Science and Engineering of Materials, Arizona State University, Tempe, Arizona 85287–1704
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Abstract

An ultrahigh vacuum (UHV) diffusion bonding/deposition instrument was designed and constructed, which can produce homophase and heterophase planar interfaces from a wide array of materials. The interfaces are synthesized in situ by diffusion bonding of two substrates with or without various interfacial layers, at temperatures up to about 1500 °C. Substrate surfaces can be heat treated, ion-beam sputter cleaned, and chemically characterized in situ by Auger electron spectroscopy prior to deposition and/or bonding. Bicrystals can be synthesized by bonding two single-crystal substrates at a specified orientation. Interfacial layers can be deposited by electron beam evaporation and/or sputter deposition in any layered or alloyed combination on the substrates before bonding. The instrument can accommodate cylindrical and/or wafer type specimens whose sizes are sufficient for fracture mechanical testing to measure interface bond strength. A variety of planar interfaces of metals, semiconductors, and ceramics were synthesized. Examples of bonded stainless steel/Ti/stainless steel, Si/Si, and sapphire/sapphire interfaces are presented.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 4 , April 2000 , pp. 1008 - 1016
Copyright
Copyright © Materials Research Society 2000

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References

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