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Defect clustering in GaN irradiated with O+ ions

Published online by Cambridge University Press:  31 January 2011

C. M. Wang ,
W. Jiang ,
W. J. Weber  and
L. E. Thomas
C. M. Wang*
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352
W. Jiang
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352
W. J. Weber
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352
L. E. Thomas
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352
*
a) Address all correspondence to this author. e-mail: chongmin.wang@pnl.gov
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Abstract

Transmission electron microscopy (TEM) was used to study microstructures formed in GaN irradiated with 600-keV O+ ions at room temperature. Three types of defect clusters were identified in the irradiated GaN: (i) basal-plane stacking faults with dimensions ranging from 5 to 30 nm, (ii) pyramidal dislocation loops, and (iii) local regions of highly disordered material. High-resolution TEM imaging clearly revealed that one type of the basal-plane stacking faults corresponded to insertion of one extra Ga–N basal plane in the otherwise perfect GaN lattice. The interpretation of these results indicated that interstitials of both Ga and N preferentially condensed on the basal plane to form a new layer of Ga–N under these irradiation conditions. The formation of these extended defects and their interactions with the point defects produced during irradiation contributed to a dramatic increase in the dynamic recovery of point defects in GaN at room temperature.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 11 , November 2002 , pp. 2945 - 2952
Copyright
Copyright © Materials Research Society 2002

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