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Development of p-type microcrystalline silicon carbon alloy films by the very high frequency plasma-enhanced chemical vapor deposition technique

Published online by Cambridge University Press:  31 January 2011

Tapati Jana ,
Arup Dasgupta  and
Swati Ray
Tapati Jana
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta - 700 032, India
Arup Dasgupta
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta - 700 032, India
Swati Ray
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta - 700 032, India
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Abstract

We developed p-type μc-silicon carbon alloy thin films by the very high frequency plasma-enhanced chemical vapour deposition technique using a SiH4, H2, CH4, and B2H6 gas mixture at low power (55 mW/cm2) and low substrate temperatures (150–250 °C). Effects of substrate temperature and plasma excitation frequency on the optoelectronic and structural properties of the films were studied. A film with conductivity 5.75 Scm−1 and 1.93 eV optical gap (E04) was obtained at a low substrate temperature of 200 °C using 63.75 MHz plasma frequency. The crystalline volume fractions of the films were estimated from the Raman spectra. We observed that crystallinity in silicon carbon alloy films depends critically on plasma excitation frequency. When higher power (117 mW/cm2) at 180 °C with 66 MHz frequency was applied, the deposition rate of the film increased to 50.7 Å/min without any significant change in optoelectronic properties.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 7 , July 2001 , pp. 2130 - 2135
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Li, Y-M., Jackson, F., Yang, L., Fieselmann, B.F., and Russell, L., in An Exploratory Survey of p-Layers for a-Si:H Solar Cells, edited by Schiff, E.A., Hick, M., Madan, A., Powell, M., and Matsuda, A.. (Mater. Res. Soc. Symp. Proc. 336, Pittsburgh, PA, 1994), p. 663.Google Scholar
2.Prasad, K., Ph.D. Thesis, Institut de Mirotechnique, University of Neuchatel, Switzerland (1991).Google Scholar
3.Guha, S., Yang, J., Banerjee, A., Glatfelter, T., Hoffman, K., and Xu, X., Tech. Digest Int. PVSEC-7, 171 (1993).Google Scholar
4.Fluckiger, R.S., Meier, J., Shah, A., Phol, J., Tzolov, M., and Carius, R., in Microcrystalline and Nanocrystalline Semiconductors, edited by Brus, L., Hirose, M., Collins, R.W., Kock, F., and Tsai, C.C. (Mater. Res. Soc. Symp. Proc. 358, Pittsburgh, PA, 1995), p. 793.Google Scholar
5.Dasgupta, A., Saha, S., and Ray, S., J. Mater. Res. 14, 2554 (1999).Google Scholar
6.Fluckiger, R.S., Ph.D. Thesis, Institut De Mirotechnique, Universite De Neuchatel, Switzerland (1996).Google Scholar
7.Fischer, D., Keppner, H., Finger, F., Prasad, K., Shah, A.V., in Proc. 10th EC Photovoltaic Solar Energy Conference, Lisbon, 201 (1991).CrossRefGoogle Scholar
8.Oda, S., Noda, J. and Matsumura, M., Jpn. J. Appl. Phys. 29, 1889 (1990).Google Scholar
9.Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H., and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).Google Scholar
10.Wieder, H., Cardona, M., and Guarnieri, C.R., Phys. Status Solidi B, 92, 99 (1979).Google Scholar
11.Mishima, Y., Miyazaki, S., Hirose, M., and Osaka, Y., Philos. Mag. B 46, 1 (1982).Google Scholar
12.Ray, S., De, S.C., and Barua, A.K., Thin Solid Films 156, 277 (1988).Google Scholar
13.Keppner, H., Kroll, U., Torres, P., Meier, J., Fischer, D., Goetz, M., Tscharner, R., and Shah, A., in Proc. of the 25th IEEE Photovoltaic Specialists Conference, Washington D.C. (IEEE Service Center, New Jersey, 1996), p. 669.Google Scholar