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Dielectric properties and energy storage capability of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film-on-foil capacitors

Published online by Cambridge University Press:  31 January 2011

Beihai Ma ,
Do-Kyun Kwon ,
Manoj Narayanan  and
U. (Balu) Balachandran
Beihai Ma*
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439
Do-Kyun Kwon
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439
U. (Balu) Balachandran
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439
*
a) Address all correspondence to this author. e-mail: bma@anl.gov
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Abstract

Antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films were grown on nickel foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field-induced AFE-to-ferroelectric (FE) phase transition. The electric field for the AFE-to-FE phase transition (EAF ≈ 270 kV/cm) and that for the reverse phase transition (EFA ≈ 230 kV/cm) were measured at room temperature on samples with PLZT films of ≈1-µm thickness. Relative permittivity of ≈560 and dielectric loss of <0.05 were measured near zero DC bias field. Hysteresis loop analysis showed that energy densities of ≈53 and 37 J/cm3 can be stored and recovered from the film-on-foil capacitors at 25 and 150 °C, respectively. Highly accelerated life tests were conducted. The projected mean time to failure is >5000 h when the capacitors are operated at room temperature with an applied field of ≈300 kV/cm.

Keywords

Dielectric propertiesEnergy storageFerroelectric
Type
Rapid Communications
Information
Journal of Materials Research , Volume 24 , Issue 9 , September 2009 , pp. 2993 - 2996
Copyright
Copyright © Materials Research Society 2009

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