Hostname: page-component-5c6d5d7d68-wp2c8 Total loading time: 0 Render date: 2024-08-07T00:09:52.618Z Has data issue: false hasContentIssue false
  • English
  • Français

The diffusion of antimony in heavily doped and n- and p-type silicon

Published online by Cambridge University Press:  31 January 2011

R.B. Fair ,
M.L. Manda  and
J.J. Wortman
R.B. Fair
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709
M.L. Manda
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27706
J.J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27650
Get access

Abstract

The diffusion of Sb in heavily doped n- and p-type Si has been studied to determine the activation energies and charge states of the point defects responsible for Sb diffusion. It is shown that neutral point defects, probably Vx, dominate under intrinsic doping conditions. For samples doped with high-concentration As or P backgrounds, Sb diffusion is dominated by a double-negatively charge point defect that causes an n2 concentration-dependent Sb diffusivity. Electric-field effects also are important. The measured diffusion coefficients are Dix = 17.5 exp(−4.05 eV/kT), and Di= = 0.01 exp(−3.75 eV/kT). The activation energies are consistent with diffusion via Vx and V= vacancies. Retarded diffusion of Sb in p+-doped samples with uniform B profiles fits an ion pairing model where Sb+B− pairs form to reduce the flux of Sb atoms.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 5 , October 1986 , pp. 705 - 711
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Mizuo, S. and Higuchi, H., Jpn. J. Appl. Phys. 20, 791 (1981).Google Scholar
2Harris, R. and Antoniadis, D. A., Appl. Phys. Lett. 43, 937 (1983).CrossRefGoogle Scholar
3Tsai, J. C. C., Schimmel, D. G., Fair, R. B., and Maszara, W. (to be published).Google Scholar
4Antoniadis, D. A. and Moskowitz, I., J. Appl. Phys. 53, 9214 (1982).Google Scholar
5Gosele, U. and Tan, T. Y., Defects in Semiconductor II, edited by Mahajan, S. and Corbett, J. W. (North-Holland, Amsterdam, 1983).Google Scholar
6Millea, M. F., J. Phys. Chem. Solids 27, 315 (1966).Google Scholar
7Seidel, T. E. and MacRae, A. U., Trans. Met. Soc. AIME 245, 491 (1969).Google Scholar
8Adda, L. P. (unpublished).Google Scholar
9Song, S. H. and Niimi, T., J. Electrochem. Soc. 128, 145 (1981).CrossRefGoogle Scholar
10Uskov, V. A., Pavlov, P. V., Kurilchik, E. V., and Pashkov, V. I., Fiz. Tverd. Tela 12, 1504 (1970).Google Scholar
11Reiss, H., Fuller, C. S., and Morin, F. J., Bell Syst. Tech. J. 35, 535 (1956).CrossRefGoogle Scholar
12Fair, R. B., in Impurity Doping Processes in Silicon, edited by Wang, F. F. Y. (North-Holland, Amsterdam, 1981), pp. 317–442.Google Scholar
13Vechten, J. A. Van and Thurmond, C. D., Phys. Rev. B 14, 3539 (1976).Google Scholar
14Messmer, R. P., in Lattice Defects in Semiconductors, 1974 (institute of Physics, Bristol, 1975), p. 44.Google Scholar
15Swalin, R. A., J. Appl. Phys. 29, 670 (1958).CrossRefGoogle Scholar
16Kimerling, L. C., Angelis, H. M. De, and Diebold, J. W., Bull. Am. Phys. Soc. 19, 10 (1974).Google Scholar