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Effects of implantation temperature on the structure, composition, and oxidation resistance of aluminum-implanted SiC

Published online by Cambridge University Press:  03 March 2011

Zunde Yang ,
Honghua Du ,
Matthew Libera  and
Irwin L. Singer
Zunde Yang
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030
Honghua Du
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030
Matthew Libera
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030
Irwin L. Singer
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington DC 20375
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Abstract

α-SiC crystals were implanted with aluminum to a high dose at room temperature or 800 °C. Transmission electron microscopy showed that SiC was amorphized by room temperature implantation but remained crystalline after 800 °C implantation. Crystalline aluminum carbide was formed and aluminum redistribution took place in SiC implanted at 800 °C. Implanted and unimplanted crystals were oxidized in 1 atm flowing oxygen at 1300 °C. Amorphization led to accelerated oxidation of SiC. The oxidation resistance of SiC implanted at 800 °C was comparable with that of pure SiC. The oxidation layers formed on SiC implanted at both temperatures consisted of silica embedded with mullite precipitates. The phase formation during implantation and oxidation is consistent with thermodynamic predictions. The results from our current and earlier studies suggest that there exists an optimum range of implantation temperature, probably above 500 °C but below 800 °C, which preserves the substrate crystallinity and retains the high aluminum dosage, for the enhancement of oxidation resistance of SiC.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 6 , June 1995 , pp. 1441 - 1447
Copyright
Copyright © Materials Research Society 1995

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