Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Doyen, L.
Petitprez, E.
Waltz, P.
Federspiel, X.
Arnaud, L.
and
Wouters, Y.
2008.
Extensive analysis of resistance evolution due to electromigration induced degradation.
Journal of Applied Physics,
Vol. 104,
Issue. 12,
Gambino, Jeffrey P.
Lee, Tom C.
Chen, Fen
and
Sullivan, Timothy D.
2009.
Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB).
p.
677.
Wright, Stuart I.
and
Nowell, Matthew M.
2009.
Electron Backscatter Diffraction in Materials Science.
p.
329.
de Orio, R.L.
Ceric, H.
and
Selberherr, S.
2010.
Physically based models of electromigration: From Black’s equation to modern TCAD models.
Microelectronics Reliability,
Vol. 50,
Issue. 6,
p.
775.
Dwyer, V. M.
2010.
An investigation of electromigration induced void nucleation time statistics in short copper interconnects.
Journal of Applied Physics,
Vol. 107,
Issue. 10,
Choi, Zungsun
Tsukasa, Matsuda
Lee, Jong Myeong
Choi, Gil-Heyun
Choi, Siyoung
and
Moon, Joo-Tae
2010.
Effect of pre-existing void in sub-30nm Cu interconnect reliability.
p.
903.
Gan, C.L.
and
Lim, M.K.
2011.
Electromigration in Thin Films and Electronic Devices.
p.
113.
Choi, Zung-Sun
Lee, Junghoon
Lim, Meng Keong
Gan, Chee Lip
and
Thompson, Carl V.
2011.
Void dynamics in copper-based interconnects.
Journal of Applied Physics,
Vol. 110,
Issue. 3,
de Orio, R.L.
Ceric, H.
and
Selberherr, S.
2011.
A compact model for early electromigration failures of copper dual-damascene interconnects.
Microelectronics Reliability,
Vol. 51,
Issue. 9-11,
p.
1573.
Gambino, Jeffrey
2012.
Handbook of Thin Film Deposition.
p.
221.
Mario, Hendro
Lim, Meng Keong
and
Gan, Chee Lip
2012.
Impact of pre-existing voids on electromigration in copper interconnects.
p.
1.
Zhu, X.
Kotadia, H.
Xu, S.
Lu, H.
Mannan, S. H.
Bailey, C.
and
Chan, Y. C.
2013.
Comments on electromigration analysis methods.
p.
529.
Sindermann, S. P.
Latz, A.
Spoddig, D.
Schoeppner, C.
Wolf, D. E.
Dumpich, G.
and
Meyer zu Heringdorf, F.-J.
2014.
Lattice degradation by moving voids during reversible electromigration.
Journal of Applied Physics,
Vol. 116,
Issue. 3,
Mansourian, Ali
Paknejad, Seyed Amir
Wen, Qiannan
Khtatba, Khalid
Zayats, Anatoly V.
and
Mannan, Samjid H.
2016.
Internal Structure Refinement of Porous Sintered Silver via Electromigration.
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT),
Vol. 2016,
Issue. HiTEC,
p.
000190.
Basavalingappa, Adarsh
Shen, Ming Y.
and
Lloyd, James R.
2017.
Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects.
Mechanics of Advanced Materials and Modern Processes,
Vol. 3,
Issue. 1,
Basavalingappa, Adarsh
and
Lloyd, James R.
2017.
Effect of Microstructure and Anisotropy of Copper on Reliability in Nanoscale Interconnects.
IEEE Transactions on Device and Materials Reliability,
Vol. 17,
Issue. 1,
p.
69.
Gambino, Jeff
2018.
Handbook of Thin Film Deposition.
p.
147.
Cheng, Yi-Lung
Lee, Chih-Yen
and
Huang, Yao-Liang
2018.
Noble and Precious Metals - Properties, Nanoscale Effects and Applications.
Santoki, Jay
Mukherjee, Arnab
Schneider, Daniel
Selzer, Michael
and
Nestler, Britta
2019.
Phase-Field Study of Electromigration-Induced Shape Evolution of a Transgranular Finger-Like Slit.
Journal of Electronic Materials,
Vol. 48,
Issue. 1,
p.
182.
Morusupalli, Rao R.
Littlefield, David L.
and
Nix, William D.
2021.
Impact of Lorentz Force On Atomic Flux During Electromigration.
p.
1.