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Effects of secondary pretreatments of substrate on the nucleation of diamond film

Published online by Cambridge University Press:  31 January 2011

W. S. Yang  and
Jung Ho Je
W. S. Yang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science / Technology, San 31, Hoyja Dong, Pohang, Kyungbuk 790–784, Republic of Korea
Jung Ho Je
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science / Technology, San 31, Hoyja Dong, Pohang, Kyungbuk 790–784, Republic of Korea
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Abstract

The effects of secondary pretreatments on diamond nucleation were investigated for the Si substrates pretreated by the diamond abrasion. When the substrate was just abraded with diamond powder, the nucleation density of diamond was 7 × 108/cm2. However, the nucleation density was found to be greatly decreased by various secondary pretreatments except by one wet chemical etching method. The nucleation density was reduced to 3 × 107/cm2 by the chemical etching (I), to 7 × 106/cm2 by the H2 plasma etching, and to ∼104/cm2 by the Ar sputtering, or O2 plasma etching. It was very slightly reduced to 3 × 108/cm2 by the chemical etching (II). The effects of secondary pretreatments in reducing the nucleation density were found to be very closely related to the removal of diamond seeds rather than topographic sites or structural defects. Therefore, diamond seeds generated by the diamond abrasion are considered as the main nucleation sites of diamond.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 7 , July 1996 , pp. 1787 - 1794
Copyright
Copyright © Materials Research Society 1996

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