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Electrical Properties of Ultrathin Al2O3 Films Grown by Metalorganic Chemical Vapor Deposition for Advanced Complementary Metal-oxide Semiconductor Gate Dielectric Applications

Published online by Cambridge University Press:  01 June 2005

Spyridon Skordas ,
Filippos Papadatos ,
Steven Consiglio ,
Eric T. Eisenbraun ,
Alain E. Kaloyeros  and
Evgeni P. Gusev
Spyridon Skordas
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Filippos Papadatos
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Steven Consiglio
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Eric T. Eisenbraun
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Alain E. Kaloyeros*
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Evgeni P. Gusev
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
*
a) Address all correspondence to this author. e-mail: akaloyeros@uamail.albany.edu
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Abstract

The electrical properties of ultrathin amorphous Al2O3 films, grown by low temperature metal-organic chemical vapor deposition from aluminum(III) 2,4-pentanedionate and water as co-reactants, were examined for potential applications as gate dielectrics in emerging complementary metal-oxide semiconductor technologies. High-frequency capacitance–voltage and current–voltage techniques were used to evaluate Al2O3 films deposited on silicon oxynitride on n-type silicon (100) substrates, with thickness ranging from 2.5 to 6.5 nm, as a function of postdeposition annealing regimes. Dielectric constant values ranging from 11.0 to11.5 were obtained, depending on the annealing method used. Metal-insulator-semiconductor devices were demonstrated with net equivalent oxide thickness values of 1.3 nm. Significant charge traps were detected in the as-deposited films and were mostly passivated by the subsequent annealing treatment. The main charge injection mechanism in the dielectric layer was found to follow a Poole–Frenkel behavior, with post-annealed films exhibiting leakage current an order of magnitude lower than that of equivalent silicon oxide films.

Keywords

AmorphousChemical vapor depositionElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 6 , June 2005 , pp. 1536 - 1543
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1International Technology Roadmap for Semiconductors, 2002 update (Semiconductor Industry Association, San Jose, CA, 2002).Google Scholar
2Buchanan, D.: Scaling the gate dielectric: Materials, integration and reliability. IBM J. Res. Dev. 45, 245 (1999).CrossRefGoogle Scholar
3Feldman, L., Gusev, E.P. and Garfunkel, E. Ultrathin dielectrics in silicon microelectronics—an overview, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by Garfunkel, E., Gusev, E.P., and Vul’, A.Y. (Kluwer Academic, Dordrecht, The Netherlands, 1998), p. 1.Google Scholar
4Gusev, E.P., Copel, M., Cartier, E., Baumvol, I.J.R., Krug, C. and Gribelyuk, M.A.: High-resolution depth profiling in ultrathin Al2O3 films on Si. Appl. Phys. Lett. 76, 176 (2000).CrossRefGoogle Scholar
5Hubbard, K.J. and Schlom, D.G.: Thermodynamic stability of binary oxides in contact with silicon. J. Mater. Res. 11, 2757 (1996).Google Scholar
6Wilk, G.D., Wallace, R.M. and Anthony, J.M.: High-k gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243 (2001).CrossRefGoogle Scholar
7Yang, W.S., Kim, Y.K., Yang, S.Y., Choi, J.H., Park, H.S., Lee, S.I. and Yoo, J.B.: Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applications. Surf. Coat. Technol. 131, 70 (2000).Google Scholar
8Skordas, S., Papadatos, F., Nuesca, G., Sullivan, J.J., Eisenbraun, E.T. and Kaloyeros, A.E.: Low-temperature metalorganic chemical vapor deposition of Al2O3 for advanced complementary metal-oxide semiconductors gate dielectric applications. J. Mater. Res. 18, 1868 (2003).CrossRefGoogle Scholar
9Gusev, E.P., Lu, H.C., Garfunkel, E.L., Gustafsson, T. and Green, M.L.: Growth and characterization of ultrathin nitrided silicon oxide films. IBM J. Res. Dev. 43, 265 (1999).CrossRefGoogle Scholar
10Lu, H.C., Gusev, E.P., Gustafsson, T. and Garfunkel, E.: The effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides. J. Appl. Phys. 81, 6992 (1997).CrossRefGoogle Scholar
11Koyama, N., Endoh, T., Fukuda, H. and Nomura, S.: Growth kinetics of ultrathin silicon dioxide films formed by oxidation in N2O. J. Appl. Phys. 79, 1464 (1996).CrossRefGoogle Scholar
12Szekeres, A., Paneva, A. and Alexandrova, S.: Spectroscopic ellipsometry of oxides and interfaces thermally formed on (100)Si and (111)Si. Surf. Sci. 454–456, 402 (2000).CrossRefGoogle Scholar
13Schroder, D.K.: Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).Google Scholar
14 Gate dielectric capacitance-voltage characterization using the model 4200 semiconductor characterization system, Keithley Application Notes Series 2239 (2000).Google Scholar
15Gordon, B.J.: C-V plotting: Myths and methods. Solid State Technol. 36(1), 57 (1993).Google Scholar
16Hori, T.: Gate Dielectrics and MOS ULSIs, Springer Series in Electronics and Photonics, Vol. 34 (Springer-Verlag, Berlin, Heidelberg, Germany, 1997).CrossRefGoogle Scholar
17Sze, S.M.: Physics of Semiconductor Devices, 2nd ed., (Wiley, New York, 1985).Google Scholar
18Nicollian, E.H. and Brews, J.R: MOS Physics and Technology (Wiley, New York, 1982).Google Scholar
19Johnson, S., Lukovsky, G. and Baumvol, I.: Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition. J. Vac. Sci. Technol. A 19(2001).CrossRefGoogle Scholar
20Manchanda, L., Morris, M.D., Green, M.L., van Dover, R.B., Klemens, F., Sorsch, T.W., Silverman, P.J., Wilk, G., Busch, B. and Aravamudhan, S.: Multi-component high-K gate dielectrics for the silicon industry. Microelectron. Eng. 59, 351 (2001).CrossRefGoogle Scholar
21Zhang, J.F., Zhao, C.Z., Sii, H.K., Groeseneken, G., Degraeve, R., Ellis, J.N. and Beech, C.D.: Relation between hole traps and hydrogenous species in silicon dioxides. Solid State Electron. 46, 1839 (2002).CrossRefGoogle Scholar
22Lo, S-H., Buchanan, D.A. and Taur, Y.: Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides. IBM J. Res. Dev. 43, 327 (1999).CrossRefGoogle Scholar
23 http://www.alphaworks.ibm.com/tech/tqm.Google Scholar
24Liu, R., Zollner, S., Fejes, P., Gregory, R., Lu, S., Reid, K., Gilmer, D., Ngyuen, B.-Y., Yu, Z., Droopad, R., Curless, J., Demkov, A., Finder, J., and Eisenbeiser, K.: Materials and physical properties of novel high-k and medium-k gate dielectrics, in Gate Stack and Silicide Issues in Silicon Processing II, edited by Campbell, S.A., Clevenger, L.A., Griffin, P.B., and Hobbs, C.C. (Mater. Res. Soc. Symp. Proc. 670, Warrendale, PA, 2001), p. K1.1.Google Scholar
25Groner, M.D., Elam, J.W., Fabreguette, F.H. and George, S.M.: Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates. Thin Solid Films 413, 186 (2002).CrossRefGoogle Scholar
26Johnson, R.S., Hoong, J.G. and Lucovsky, G.: Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1−x alloys. J. Vac. Sci. Technol. B19, 1606 (2001).CrossRefGoogle Scholar
27Lucovsky, G., Philips, J.C., and Thorpe, M.F.: Minimization of mechanical and chemical strain at dielectric-semiconductor and internal dielectric interfaces in stacked gate dielectrics for advanced CMOS devices, in Proc. of Characterization and Metrology for USLI Technology, (AIP Conf. Proc., 550, 2001), p. 154.Google Scholar
28Perera, R., Ikeda, A., Hattori, R. and Kuroki, Y.: Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation. Microelectron. Eng. 65(4), 357 (2003).CrossRefGoogle Scholar
29Ponce-Pedraza, A., Carrillo-Lopez, J. and Morales-Acevedo, A.: Improving n + p p+ single crystalline silicon solar cells by long high temperature Al annealing. Mod. Phys. Lett. B 15, 621 (2001).CrossRefGoogle Scholar
30Torrison, L., Tolle, J., Kouvetakis, J., Dey, S.K., Gu, D., Tsong, I.S.T. and Crozier, P.A.: Stoichiometric and non-stoichiometric films in the Si–O–N system: Mechanical, electrical, and dielectric properties. Mater. Sci. Eng. B97, 54 (2003).CrossRefGoogle Scholar
31Klein, T.M., Niu, D., Epling, W.S., Li, W., Mayer, D.M., Hobbs, C.C., Hedge, R.I., Baumvol, I.J.R. and Parsons, G.N.: Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100). Appl. Phys. Lett. 75, 4001 (1999).CrossRefGoogle Scholar
32Chin, A., Wu, Y.H., Chen, S.B., Liao, C.C. and Chen, W.J.High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5–10 Å, 2000 Symposium on Vlsi Tech. Digest of Technical Papers 2000, Honolulu, HI (2000).Google Scholar