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Electron field emission from polycrystalline diamond films

Published online by Cambridge University Press:  31 January 2011

Qing Zhang ,
S. F. Yoon ,
J. Ahn ,
Bo Gan  and
Rusli
Qing Zhang
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
S. F. Yoon
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
J. Ahn
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
Bo Gan
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
Rusli
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
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Extract

The influence of the carbon network structure of polycrystalline diamond films that were prepared from a mixture of H2, CH4, and N2 using microwave-enhanced plasma chemical vapor deposition on electron field emission has been systematically investigated. With increasing nitrogen gas flow ratio of [ N2]/[H2 + CH4 + N2], the film hardness and surface roughness of the as-grown films decreased, and the concentration ratio of amorphous sp2-bonded carbon clusters and mixed sp2−sp3 carbon structures to tetrahedrally bonded amorphous carbon phases increased. Correspondingly, the turn-on voltage for electron emission decreased. After the surface post-treatment by pure hydrogen plasma exposure, the concentration ratio was clearly found to have increased dramatically and the turn-on voltage decreased significantly for the films produced at small nitrogen flow ratio. Our results suggest that the influence of the concentration ratio on electron field emission is much more significant than that of the surface roughness of the polycrystalline diamond films studied in this paper.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 212 - 217
Copyright
Copyright © Materials Research Society 2000

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References

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