Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T08:32:20.324Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron microscopy characterization of monoclinic SiAs precipitates in heavily As+-implanted silicon

Published online by Cambridge University Press:  31 January 2011

A. Armigliato  and
A. Parisini
A. Armigliato
Affiliation:
C.N.R.-Istituto LAMEL, via de' Castagnoli 1, 40126 Bologna, Italy
A. Parisini
Affiliation:
C.N.R.-Istituto LAMEL, via de' Castagnoli 1, 40126 Bologna, Italy
Get access

Abstract

Silicon wafers have been implanted with As+ ions at an energy of 100 keV and a dose of 1 × 1017 cm−2 and subsequently annealed at 1050°for 15 min. This results in a peak As concentration of 7 × 1021 cm−3, which is far beyond the solid solubility value of arsenic in silicon at this annealing temperature. Rod-like precipitates, dislocations, and small precipitate-like defects have been observed by transmission electron microscopy. From the analysis of several diffraction patterns taken on a number of rod-like particles at different tilt angles, it has been unambiguously found that they have the structure of the monoclinic SiAs compound previously reported in literature. The stoichiometry of the precipitates has been confirmed by x-ray microanalysis. To our knowledge, this is the first time that this SiAs phase is detected in As+-implanted silicon.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 8 , August 1991 , pp. 1701 - 1710
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Joshi, M. L., J. Electrochem. Soc. 113, 45 1966).CrossRefGoogle Scholar
2.Beck, C. G. and Stickler, R., J. Appl. Phys. 37, 4683 (1966).CrossRefGoogle Scholar
3.Joshi, M. L. and Dash, S., IBM Journal 271 (May 1967).Google Scholar
4.Wu, N. R., Sadana, D. K., and Washburn, J., Appl. Phys. Lett. 44, 782 (1984).CrossRefGoogle Scholar
5.Natsuaki, N., Tamura, M., and Tokuyama, T., J. Appl. Phys. 51, 3373 (1980).CrossRefGoogle Scholar
6.Lietoila, A., Gibbons, J. F., Magee, T. J., Peng, J., and Hong, J. D., Appl. Phys. Lett. 35, 532 (1979).CrossRefGoogle Scholar
7.Parisini, A., Bourret, A., Armigliato, A., Servidori, M., Solmi, S., Fabbri, R., Regnard, J. R., and Allain, J. L., J. Appl. Phys. 67, 2320 (1990).CrossRefGoogle Scholar
8.Armigliato, A., Nobili, D., Solmi, S., Bourret, A., and Werner, P., Electrochem, J.. Soc. 133, 2560 (1986).Google Scholar
9.Armigliato, A., Bourret, A., Frabboni, S., and Parisini, A., in ‘Microscopy of Semi-conducting Materials 1987’ Inst. Phys. Conf. Ser. No. 87, p. 55.Google Scholar
10.Wadsten, T., Acta Chem. Scand. 23, 331 (1969); see also ASTM Card No. 22–1315.CrossRefGoogle Scholar
11.Garulli, A., Armigiiato, A., and Vanzi, M., Microsc, J.. Spectrosc. Electron. 10, 135 (1985).Google Scholar
12. Actually, the value of the β angle reported by Wadsten is 46.3°. Nevertheless, one has to choose the obtuse angle between the a-and c-axis to be consistent with the set of interplanar distances published by this author. As an example, with β = 46.3°, the experimental value of 0.916 nm corresponding to one of the spots in the diffraction pattern of Fig. 2b) see also Table I) should be indexed as a d 201 in disagreement with the value of d 201 = 0.395 nm reported by Wadsten and assumed in this work.Google Scholar
13.Servidori, M. and Armigiiato, A., J. Mater. Sci. 10, 306 (1975).CrossRefGoogle Scholar
14.Bourret, A. and Schroeter, W., Ultramicroscopy 14, 97 (1984).CrossRefGoogle Scholar
15.Cliff, G. and Lorimer, G. W., Microsc, J.. 103, 203 (1975).Google Scholar
16.Williams, D. B., in Practical Analytical Electron Microscopy in Materials Science, Philips Electronic Instruments, Inc. (Mahwah, NJ, 1984), p. 74.Google Scholar
17.Kelly, P. M., Jostsons, A., Blake, R.G., and Napier, J.G., Phys. Status Solidi a 31, 771 (1975).CrossRefGoogle Scholar
18.Bender, H., Avau, D., Vandervorst, W., Van Landuyt, J., and Maes, H. E., in Defects in Semiconductors, edited by von Bardeleben, H. J, Materials Science Forum, Vol. 10–12 (1986), p. 1165.Google Scholar