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Epitaxial growth of Cu2O films on MgO by sputtering

Published online by Cambridge University Press:  31 January 2011

Dean J. Miller ,
Jeffrey D. Hettinger ,
Ronald P. Chiarello  and
Hyung K. Kim
Dean J. Miller
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
Jeffrey D. Hettinger
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
Ronald P. Chiarello
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
Hyung K. Kim
Affiliation:
Department of Physics, Pusan National University, Pusan, Korea
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Abstract

The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 10 , October 1992 , pp. 2828 - 2832
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1Drobny, V. F. and Pulfrey, D. L., 13th IEEE Photov. Spec. Conf. (IEEE, New York, 1978), pp. 180–183.Google Scholar
2Fujinaka, M. and Berezin, A. A., J. Appl. Phys. 54 (6), 3582–3588 (1983).CrossRefGoogle Scholar
3Rakhshani, A.E., Solid-State Electron. 29 (1), 7–17 (1986).CrossRefGoogle Scholar
4Beensh-Marchwicka, G., Krol-Stepniewska, L., and Slaby, M., Thin Solid Films 88, 33–39 (1982).CrossRefGoogle Scholar
5Miller, D. J., Chiarello, R. P., Kim, H. K., Roberts, T., You, H., Kampwirth, R. T., Gray, K. E., Zheng, J. Q., Williams, S., Ketterson, J. B., and Chang, R.P.H., Appl. Phys. Lett. 59, 3174-3176 (1991).Google Scholar
6Do, K.B., Arnason, S.B., Carey, G.P., Ahn, C.H., Hammond, R.H., Beasley, M. R., and Geballe, T. H., work presented at the spring 1991 APS meeting, Cincinnati, OH.Google Scholar
7Klein, W., Schmitt, H., and Boffgen, M., Thin Solid Films 191, 247–254 (1990).CrossRefGoogle Scholar
8Holzschuh, H. and Suhr, H., J. Appl. Phys. A 51, 486–490 (1990).CrossRefGoogle Scholar
9Luzeau, P., Luzea, X.Z.P., Xu, X. Z., Lagues, M., Hess, N., Contour, J.P., Nanot, M., Queyroux, F., Touzeau, M., and Pagnon, D., J. Vac. Sci. Technol. A 8 (6), 3938 (1990).CrossRefGoogle Scholar
10Tsiranovits, Ch., Antonopoulos, J. G., and Stoemenos, J., Thin Solid Films 71, 133–140 (1980).CrossRefGoogle Scholar