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Epitaxial LiNbO3 thin films on sapphire substrates grown by solid source MOCVD

Published online by Cambridge University Press:  03 March 2011

Z. Lu ,
R. Hiskes ,
S.A. DiCarolis ,
R.K. Route ,
R.S. Feigelson ,
F. Leplingard  and
J.E. Fouquet
Z. Lu
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-4045 and Hewlett-Packard Corp., 3500 Deer Creek Road, Palo Alto, California 94303
R. Hiskes
Affiliation:
Hewlett-Packard Corp., 3500 Deer Creek Road, Palo Alto, California 94303
S.A. DiCarolis
Affiliation:
Hewlett-Packard Corp., 3500 Deer Creek Road, Palo Alto, California 94303
R.K. Route
Affiliation:
Center for Materials Research, Stanford University, Stanford, California 94305-4045
R.S. Feigelson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-4045
F. Leplingard
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
J.E. Fouquet
Affiliation:
Hewlett-Packard Corp., 3500 Deer Creek Road, Palo Alto, California 94303
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Abstract

C-axis LiNbO3 epitaxial films have been grown on c-plane sapphire substrates by solid source metal-organic chemical vapor deposition (MOCVD) using the tetramethylheptanedionate sources, Li(thd) and Nb(thd)4. Stoichiometric LiNbO3 films were deposited from Li(thd)-rich source compositions. Rocking curve FWHM values as low as 0.044°were measured on films grown at 710 °C. Rocking curve peak widths became broader as films were grown at progressively lower substrate temperatures. Single prism coupling experiments revealed clearly visible optical waveguiding, with optical attenuation values as low as 2 dB/cm in the best films.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 9 , September 1994 , pp. 2258 - 2263
Copyright
Copyright © Materials Research Society 1994

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References

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