Hostname: page-component-77c89778f8-sh8wx Total loading time: 0 Render date: 2024-07-21T08:33:04.337Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of TiNi shape memory alloy thin films by pulsed-laser deposition

Published online by Cambridge University Press:  31 January 2011

X. Y. Chen ,
Y. F. Lu ,
Z. M. Ren  and
S. Zhu
X. Y. Chen
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, Kent Ridge Crescent, 119260
Y. F. Lu*
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, Kent Ridge Crescent, 119260
Z. M. Ren
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, Kent Ridge Crescent, 119260
S. Zhu
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, Kent Ridge Crescent, 119260
*
a) Address all correspondence to this author. e-mail: eleluyf@nus.edu.sg
Get access

Abstract

Thin films of TiNi shape memory alloy have been prepared by pulsed-laser deposition at different substrate temperatures. The stoichiometry and crystallinity of the deposited films as functions of the substrate temperature were investigated. The deposition rate, surface morphology, crystallization temperature, and phase transformation behavior of the films were studied. It was found that both the substrate temperature and the laser fluence play important roles in the composition control and crystallization of the films. The deposition rate is of the order of 10−2 nm/pulse. The Ni content ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous Ti–51.5 at.% Ni films is around 460 °C. The activation energy of the crystallization process was determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti–51.5 at.% Ni film was determined to be −20.8 °C.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 279 - 283
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Johnson, A.D., J. Micromech. Microeng. 1, 34 (1991).CrossRefGoogle Scholar
2.Wolf, R.H. and Heuer, A.H., J. Microelectromech. Syst. 4, 206 (1995).CrossRefGoogle Scholar
3.Kohl, M., Skrobanek, K.D., Quandt, E., Schloßmacher, P., Schüßler, A., and Allen, D.M., J. Phys. IV 5, C8–1187 (1995).Google Scholar
4.Benard, W.L., Kahn, H., Heuer, A.H., and Huff, M.A., J. Micro-electromech. Syst. 7, 245 (1998).CrossRefGoogle Scholar
5.Busch, J.D., Johnson, A.D., Lee, C.H., and Stevenson, D.A., J. Appl. Phys. 68, 6224 (1990).CrossRefGoogle Scholar
6.Ishida, A., Takei, A., and Miyazaki, S., Thin Solid Films 228, 210 (1993).CrossRefGoogle Scholar
7.Ishida, A. and Miyazaki, S., ASME J. Eng. Mater. Technol. 121, 2 (1999).CrossRefGoogle Scholar
8.Baäuerle, D., Laser Processing and Chemistry (Springer, Berlin, Germany, 1996), p. 397.CrossRefGoogle Scholar
9.Hubler, G.K., in Pulsed Laser Deposition of Thin Films, edited by Chrisey, D.B. and Hubler, G.K. (Wiley, New York, 1994), p. 353.Google Scholar
10.Ikuta, K., Hayashi, M., Matsuura, T., and Fujishiro, H., Proceedings of the IEEE Micro Electro Mechanical Systems (IEEE, Piscataway, NJ, 1994), p. 355.Google Scholar
11.Grummon, D.S., Hou, L., Zhao, Z., and Pence, T.J., J. Phys. IV 5, C8–665 (1995).Google Scholar
12.Miyazaki, S. and Ishida, A., Mater. Sci. Eng. A 273–275, 106 (1999).CrossRefGoogle Scholar
13.Bendahan, M., Seguin, J.L., Canet, P., and Carchano, H., Thin Solid Films 283, 61 (1996).CrossRefGoogle Scholar
14.Horwitz, J.S. and Sprague, J.A., in Pulsed Laser Deposition of Thin Films, edited by Chrisey, D.B. and Hubler, G.K. (Wiley, New York, 1994), p. 240.Google Scholar
15.Chen, L.C., in Pulsed Laser Deposition of Thin Films, edited by Chrisey, D.B. and Hubler, G.K. (Wiley, New York, 1994), p. 176.Google Scholar
16.Ciabattari, F., Fuso, F., and Arimondo, E., Appl. Phys. A 64, 623 (1997).CrossRefGoogle Scholar
17.Kissinger, H.E., Anal. Chem. 29, 1702 (1957).CrossRefGoogle Scholar
18.Buschow, K.H.J., J. Phys. F: Met. Phys. 13, 563 (1983).CrossRefGoogle Scholar
19.Specifying NiTi Materials File (Shape Memory Applications Inc., San Jose, CA, 1998).Google Scholar
20.Funakubo, H., Shape Memory Alloys, translated by Kennedy, J.B. (Gordon and Breach Science Publishers, New York, 1987), p. 68.Google Scholar