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Filament formation in switching devices based on V2O5 gel films

Published online by Cambridge University Press:  31 January 2011

J-G. Zhang  and
P.C. Eklund
J-G. Zhang
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401-3393
P.C. Eklund
Affiliation:
Department of Physics & Astronomy and Center for Applied Energy Research, University of Kentucky, Lexington, Kentucky 40506
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Abstract

Filament formation in V2O5 gel films leading to a two-terminal switching device has been observed. In a previous paper, we have identified the switching with a metal-insulator transition within a permanent, current-induced channel between the electrical contacts. Here, we describe the reversible formation of a filament inside the channel, and obtain a static solution of the heat transport equation for this device which indicates a large temperature variation within the filament, and further reveals the failure mechanism for the reversible switching. The principle of least entropy production has been used to analyze the filament growth, which results in a successful simulation of the “on” state I-V characteristic of the switching process, including its negative resistance region.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 3 , March 1993 , pp. 558 - 564
Copyright
Copyright © Materials Research Society 1993

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References

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