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Growth mechanisms and near-interface structure in relation to orientation of MoS2 sputtered thin films

Published online by Cambridge University Press:  31 January 2011

J. Moser  and
F. Lévy
J. Moser
Affiliation:
Institut de Physique Appliquée, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland
F. Lévy
Affiliation:
Institut de Physique Appliquée, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland
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Abstract

The growth of sputter-deposited MoS2 thin films is investigated by high-resolution transmission electron microscopy. Pure high-temperature grown films are compared with H2O-contaminated films and amorphous annealed films. In the first case, the films are oriented. They have a first interface layer with crystallites having their (002) planes parallel with the substrate. The subsequent growth leads to the already described lamellar structure, with flakes perpendicular to the substrate. This structure can be explained in terms of a local branching process during crystal growth. The orientation relations between the crystallites in the parallel layer and the lamellae are determined. The local structure at the root of the lamellae, as well as at the interface, is investigated by image calculation. Water contamination in the plasma is shown to result in an amorphization of the interfacial region, followed by lamellar growth. Amorphous films annealed under vacuum do not show a lamellar structure, but have isotropic crystallization. In each of these cases, the mechanism determining the film structure is different.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 3 , March 1992 , pp. 734 - 740
Copyright
Copyright © Materials Research Society 1992

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