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High efficiency deposition of diamond film by hot filament chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Yan Chen ,
Qijin Chen  and
Zhangda Lin
Yan Chen*
Affiliation:
State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
Qijin Chen
Affiliation:
State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
Zhangda Lin
Affiliation:
State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
*
(a) Address all correspondence to this author. Present address: Department of Physics and Astronomy, York University, North York, Ontario Canada M3J 1P3.
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Abstract

A new designed reaction chamber with new relative distribution of filament and substrates has been adopted in order to increase the deposition area of diamond films and thus increase the deposition efficiency in conventional hot filament chemical vapor deposition (HFCVD) systems. The relatively small reaction chamber was cuboid shaped (50 × 25 × 25 mm3) and composed of molybdenum wafers. It was established in the vacuum chamber. A tungsten filament was hung up vertically in the center of the small chamber and parallel to the gas flow path. At the four inner sides of the reaction chamber, four Si(100) substrates (30 × 10 × 0.5 mm3) were installed to grow diamond films. The deposition results indicate that uniform diamond films can be obtained on the four substrates, and the film growth rate is the same at both ends of the substrates. The diamond film growth rate was about 1−2 μm/h, which is similar to those of the conventional HFCVD method. Thus, the deposition area and efficiency can be increased four times in the case without the filament number, gas flow rate, and power consumption.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 12 , December 1996 , pp. 2957 - 2960
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1.Spitsyn, B. V., Bouilov, L. C., and Deryaguin, B. V., J. Cryst. Growth 52, 219 (1981).Google Scholar
2.Matsumoto, M., Sato, Y., Kamo, M., and Setaka, N., Jpn. J. Appl. Phys. 71, L183 (1982).CrossRefGoogle Scholar
3.Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. Cryst. Growth 62, 642 (1983).Google Scholar
4.Matsumoto, S., Hino, M., and Kobayashi, T., Appl. Phys. Lett. 51, 737 (1987).Google Scholar
5.Karinara, K., Sasaki, S., Kawarada, M., and Koshina, N., Appl. Phys. Lett. 52, 437 (1988).Google Scholar
6.Hirose, Y. and Mitsuigumi, M., New Diamond 4, 34 (1988).Google Scholar
7.Schäfer, L., Sattler, M., and Klages, C-P., Application of Diamond Films and Related Materials, edited by Tzeng, Y.et al. (Elsevier Science Publishers B.V., Amsterdam, 1991).Google Scholar
8.Bachmann, P. K., Leers, D., and Lydton, H., Diamond Relat. Mater. 1, 1 (1991).CrossRefGoogle Scholar
9.Kobashi, K., Nishimura, K., Kawate, Y., and Horiuchi, T., Phys. Rev. B 38, 4067 (1988).CrossRefGoogle Scholar
10.Debroy, T., Tankala, K., Yarbrough, W. A., and Messier, R., J. Appl. Phys. 68, 2424 (1990).CrossRefGoogle Scholar
11.Kim, J. S., Kim, M. H., Park, S.S., and Lee, J.Y., J. Appl. Phys. 67, 3354 (1990).Google Scholar
12.Sawabe, A. and Iuuzuka, T., Appl. Phys. Lett. 46, 146 (1985).Google Scholar