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Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growth

Published online by Cambridge University Press:  31 January 2011

B.R. Stoner ,
S.R. Sahaida ,
J.P. Bade ,
P. Southworth  and
P.J. Ellis
B.R. Stoner
Affiliation:
Kobe Steel USA Ltd., Electronic Materials Center, 79 TW Alexander Drive, P.O. Box 13608, Research Triangle Park, North Carolina 27709
S.R. Sahaida
Affiliation:
Kobe Steel USA Ltd., Electronic Materials Center, 79 TW Alexander Drive, P.O. Box 13608, Research Triangle Park, North Carolina 27709
J.P. Bade
Affiliation:
Kobe Steel USA Ltd., Electronic Materials Center, 79 TW Alexander Drive, P.O. Box 13608, Research Triangle Park, North Carolina 27709
P. Southworth
Affiliation:
Kobe Steel Europe Ltd., Research Laboratory, 10 Nugent Road, Surrey Research Park, Guildford, Surrey, GU2 5AF, United Kingdom
P.J. Ellis
Affiliation:
Kobe Steel Europe Ltd., Research Laboratory, 10 Nugent Road, Surrey Research Park, Guildford, Surrey, GU2 5AF, United Kingdom
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Abstract

Highly oriented diamond films were grown on single-crystal silicon substrates. Textured films were first nucleated by a two-step process that involved the conversion of the silicon surface to an epitaxial SiC layer, followed by bias-enhanced nucleation. The nucleation stage, which produced a partially oriented diamond film, was immediately followed by a (100) textured growth process, thus resulting in a film surface where approximately 100% of the grains are epitaxially oriented relative to the silicon substrate. The diamond films were characterized by both SEM and Raman spectroscopy. Structural defects in the film are discussed in the context of their potential effect on the electrical characteristics of the resulting film.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 6 , June 1993 , pp. 1334 - 1340
Copyright
Copyright © Materials Research Society 1993

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References

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