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Improvement in the crystallinity and electrical properties in Hg1−xCdxTe epilayers utilizing CdTe buffer layers grown on GaAs substrates by a two-step annealing process

Published online by Cambridge University Press:  31 January 2011

Y.S. Ryu ,
B.S. Song ,
H.J. Kim ,
T.W. Kang  and
T.W. Kim
Y.S. Ryu
Affiliation:
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
B.S. Song
Affiliation:
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
H.J. Kim
Affiliation:
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
T.W. Kang
Affiliation:
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
T.W. Kim
Affiliation:
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
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Abstract

High-quality Hg1−xCdxTe epilayers on CdTe buffer layers were grown by molecular beam epitaxy using various growth methods. The reflection high-energy electron diffraction, scanning electron microscopy, and atomic force microscopy measurements showed that the crystallinity and electrical properties of the Hg1−xCdxTe epilayers grown on CdTe buffer layers deposited by using a two-step annealing growth method were improved. These results indicate that high-quality Hg1−xCdxTe films can be obtained by using CdTe buffer layers grown by the two-step annealing growth method and that the grown Hg1−xCdxTe epilayers hold promise for potential applications in optoelectronic devices in the area of infrared detectors.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 2 , February 2003 , pp. 257 - 261
Copyright
Copyright © Materials Research Society 2003

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References

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