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Influence of the electrokinetic behaviors of abrasive ceria particles and the deposited plasma-enhanced tetraethylorthosilicate and chemically vapor deposited Si3N4 films in an aqueous medium on chemical mechanical planarization for shallow trench isolation

Published online by Cambridge University Press:  31 January 2011

Sang-Kyun Kim
Affiliation:
Department of Ceramic Engineering, Hanyang University, Seoul 133–791, Korea
Sangkyu Lee
Affiliation:
Department of Ceramic Engineering, Hanyang University, Seoul 133–791, Korea
Ungyu Paik*
Affiliation:
Department of Ceramic Engineering, Hanyang University, Seoul 133–791, Korea
Takeo Katoh
Affiliation:
Nano Silicon on Insulator (SOI) Process Laboratory, Hanyang University, Seoul 133–791, Korea
Jea-Gun Park
Affiliation:
Nano Silicon on Insulator (SOI) Process Laboratory, Hanyang University, Seoul 133–791, Korea
*
a) Address all correspondence to this author. e-mail: upaik@hanyang.ac.kr
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Abstract

The effects of the electrokinetic behavior of abrasive ceria particles suspended in an aqueous medium and the deposited plasma-enhanced tetraethylorthosilicate (PETEOS) and chemical vapor deposition (CVD) Si3N4 films on chemical mechanical planarization (CMP) for shallow trench isolation were investigated. The colloidal characteristics of ceria slurries, such as their stability and surface potential, in acidic, neutral, and alkaline suspensions were examined to determine the correlation between the colloidal properties of ceria slurry and CMP performance. The surface potentials of the ceria particles and the PETEOS and CVD Si3N4 films in an aqueous suspending medium were dependent on the pH of the suspending medium. The differences in surface charges of ceria particles and the PETEOS and CVD Si3N4 films have a profound effect on the removal rate and oxide-to-nitride selectivity of CMP performance.

Type
Articles
Copyright
Copyright © Materials Research Society 2003

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References

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