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Lateral diffusion in Ni–GaAs couples investigated by transmission electron microscopy

Published online by Cambridge University Press:  31 January 2011

S. H. Chen ,
C. B. Carter  and
C. J. PalmstrΦm
S. H. Chen
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
C. J. PalmstrΦm
Affiliation:
Bell Communication Research, 31 Newman Springs Road, Redbank, New Jersey 07701
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Abstract

A method has been devised for preparing lateral Ni–GaAs diffusion couples for transmission electron microscopy investigations. By annealing diffusion couples in situ in a hot stage, the growth of a ternary phase has been observed in the microscope, and shows parabolic time dependence of the growth. In the temperature range of 200–300 °C, Ni is the predominant diffusing species in the ternary phase while Ga and As are essentially immobile. The experimental results are compared with previous investigations of the reactions of Ni thin films with bulk GaAs.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1385 - 1396
Copyright
Copyright © Materials Research Society 1988

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