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Mechanism of grain growth in liquid-phase-sintered β–SiC

Published online by Cambridge University Press:  31 January 2011

Young-Wook Kim ,
Mamoru Mitomo  and
Guo-Dong Zhan
Young-Wook Kim*
Affiliation:
Department of Materials Science and Engineering, The University of Seoul, 90 Jeonnong-Dong, Dongdaemon-Ku, Seoul 130–743, Korea
Mamoru Mitomo
Affiliation:
National Institute for Research in Inorganic Materials, Tsukuba-shi, Ibaraki 305–0044, Japan
Guo-Dong Zhan
Affiliation:
National Institute for Research in Inorganic Materials, Tsukuba-shi, Ibaraki 305–0044, Japan
*
a)Address all correspondence to this author. e-mail: ywkim@uoscc.uos.ac.kr
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Abstract

The mechanism for grain growth of β–SiC was investigated by annealing hot-pressed β–SiC–oxynitride glass (Y–Mg–Si–Al–O–N) ceramics at 1800 °C. An observed decrease in grain growth with increasing weight fraction of liquid confirms a diffusion-controlled growth mechanism in the system. The growth of nearly spherical β–SiC grains in the annealed specimen also supports the above conclusion.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 11 , November 1999 , pp. 4291 - 4293
Copyright
Copyright © Materials Research Society 1999

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