Hostname: page-component-84b7d79bbc-l82ql Total loading time: 0 Render date: 2024-07-31T03:28:04.763Z Has data issue: false hasContentIssue false

Microstructural glass modifications in as-fired and high-voltage-surged RuO2-based thick film resistors

Published online by Cambridge University Press:  31 January 2011

Kenji Adachi
Affiliation:
Sumitomo Metal Mining Company, Central Research Laboratory, Ichikawa 272, Japan
Sadahiro Iida
Affiliation:
Sumitomo Metal Mining Company, Central Research Laboratory, Ichikawa 272, Japan
Juji Ishigame
Affiliation:
Sumitomo Metal Mining Company, Electronics Division, Ome, Tokyo 198, Japan
Shyu Sekihara
Affiliation:
Sumitomo Metal Mining Company, Electronics Division, Ome, Tokyo 198, Japan
Get access

Abstract

Electrical conduction in thick film resistors has been studied, and microstructures, especially around conducting RuO2 phases in a lead-borosilicate glass matrix in as-fired and high-voltage-surged thick film resistors, have been observed in detail using transmission electron microscopy. Lattice images of as-fired thick film resistors have suggested the presence of subtle structural modifications in the very thin area across the RuO2/glass interface, whereas in the glass matrix very small dot-like contrasts on the order of 1 nm were occasionally observed and were interpreted as being small crystallites or Ru clusters. Heavy electrical loadings of thick film resistors were found to induce the local formation of plate-like crystals in glass, which were identified by electron diffraction to be a slightly modified anorthite. The significance of these observations in terms of the conduction network and the degradation due to the electrical overloading of thick film resistors are discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Vest, R. W., Purdue Research Foundation, Final Technical Report, ARPA Order No. 1642 (1975).Google Scholar
2.Forlani, F. and Prudenziati, M., Electrocomp. Sci. Technol., 3, 77 (1976).CrossRefGoogle Scholar
3.Ansell, M. P., Electrocomp. Sci. Technol. 3, 141 (1976).CrossRefGoogle Scholar
4.Pike, G. E. and Seager, C. H., J. Appl. Phys. 48, 5152 (1977).CrossRefGoogle Scholar
5.Smith, D. P. H. and Anderson, J. C., Thin Film Solids 71, 79 (1980).CrossRefGoogle Scholar
6.Prudenziati, M., Electrocomp. Sci. Technol. 10, 285 (1983).CrossRefGoogle Scholar
7.Angus, H. C. and Gainsbury, P. E., Electronic Components 9, 84 (1968).Google Scholar
8.Nordstrom, T. V. and Hills, C. R., J. Hybrid Microelectron. 40, 14 (1980).Google Scholar
9.Mott, N. F. and Davis, E. A., Electronic Processes in Non-Crystalline Solids (Clarendon Press, Oxford, 1971, 2nd ed. 1979).Google Scholar
10.Hill, R. M., Proc. 2nd Europ. Symp. Microelectron. 95 (1979).Google Scholar
11.Cattaneo, A., Cocito, M., Forlani, F., and Prudenziati, M., Electro-comp. Sci. Technol. 4, 205 (1977).CrossRefGoogle Scholar
12.Sacchi, M., Antonini, M., and Prudenziati, M., Phys. Status Solidi (a) 109, K23 (1988).CrossRefGoogle Scholar
13.Borg, I. Y. and Smith, D.K., Am. Mineral. 53, 1709 (1968).Google Scholar
14.Smith, J. V., Feldspar Minerals (Springer-Verlag, New York, 1974), Vol. 1.Google Scholar
15.Adachi, K., to be presented at Int. Symp. Microelectron., ISHM, (1991).Google Scholar
16.Nishigaki, S., Yano, S., Fukuta, J., Fukuya, M., and Fuwa, T., Proc. Int. Symp. Microelectron., ISHM, 225 (1985).Google Scholar