Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-21T11:30:27.013Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure of columnar-grained SrTiO3 and BaTiO3 thin films prepared by chemical solution deposition

Published online by Cambridge University Press:  31 January 2011

C. L. Jia ,
K. Urban ,
S. Hoffmann  and
R. Waser
C. L. Jia
Affiliation:
Institut für Festkörperforschung, Forschungszentrum, Jülich GmbH, D-52425 Jülich, Germany
K. Urban
Affiliation:
Institut für Festkörperforschung, Forschungszentrum, Jülich GmbH, D-52425 Jülich, Germany
S. Hoffmann
Affiliation:
Institut für Werkstoffe der Elektrotechnik, Rheinisch-Westfälische Technische Hochschule Aachen, D-52056 Aachen, Germany
R. Waser
Affiliation:
Institut für Werkstoffe der Elektrotechnik, Rheinisch-Westfälische Technische Hochschule Aachen, D-52056 Aachen, Germany
Get access

Abstract

The microstructure and lattice defects of SrTiO3 and BaTiO3 thin films with columnar grains prepared by a chemical solution deposition technique have been investigated by means of transmission electron microscopy. The columnar grains in the SrTiO3 films exhibit a preferential orientation with a crystallographic 〈111〉 direction parallel to the normal of film, which, in turn, follows the orientation texture of the substrate Pt layer. Cubic-to-cubic relationships have been found for the two materials. For the BaTiO3 films the columnar grains are oriented in a random way without any preferential relationship to the substrate Pt layer. Pores, lattice defects, and grain boundaries occur in either type of film, however in different configurations. This reflects the individual nature of the materials and the different formation and growth mechanisms of the films under the preparation conditions.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2206 - 2217
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990); Ferroelectric Thin Films II, edited by A. I. Kingon, E. R. Myers, and B. Tuttle (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992); Ferroelectric Thin Films III, edited by E. R. Myers, B. A. Tuttle, S. B. Desu, and P. K. Larsen (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1993); Ferroelectric Thin Films IV, edited by S. B. Desu, B. A. Tuttle, R. Ramesh, and T. Shiosaki (Mater. Res. Soc. Symp. Proc. 361, Pittsburgh, PA, 1995); Epitaxial Oxide Thin Films and Heterostructures, edited by D. K. Fork, J. M. Phillips, R. Ramesh, and R. M. Wolf (Mater. Res. Soc. Symp. Proc. 341, Pittsburgh, PA, 1994); Epitaxial Oxide Thin Films II, edited by J. S. Speck, D. K. Fork, R. W. Wolf, and T. Shiosaki (Mater. Res. Soc. Symp. Proc. 401, Pittsburgh, PA, 1996).Google Scholar
2.Fujii, E., Uemoto, Y., Hayashi, S., Nasu, T., Shimada, Y., Matsuda, A., Kibe, M., Azuma, M., Otsuki, T., Kano, G., Scott, M., and Paz de Araujo, C. A., IEDM Conf., Dec. 1992.Google Scholar
3.Gnade, B. E., Summerfelt, S. R., and Crenshaw, D., in Science and Technology of Electroceramic Thin Films, edited by Auciello, O. and Waser, R., NATO ASI Series E284 (Kluwer, Dordrecht, 1995), p. 373.CrossRefGoogle Scholar
4.Kingon, A. I., Streiffer, S. K., Basceri, C., and Summerfelt, S. R., MRS Bull. 21, 46 (1996).CrossRefGoogle Scholar
5.Ueda, T., Noma, A., and Ueda, D., Integr. Ferroelectrics 7, 45 (1995).CrossRefGoogle Scholar
6.McKee, R. A., Walker, F. J., Specht, E. D., and Alexander, K. B., in Epitaxial Oxide Thin Films and Heterostructures, edited by Fork, D. K., Phillips, J. M., Ramesh, R., and Wolf, R. M. (Mater. Res. Soc. Symp. Proc. 341, Pittsburgh, PA, 1994), p. 309.Google Scholar
7.Cotell, C. M., Horwitz, J. S., Sprague, J. A., Auyueng, R. C. Y., Antonio, P. D., and Konnert, J., Mater. Sci. Eng. B32, 221 (1995).CrossRefGoogle Scholar
8.Abe, K. and Komatsu, S., J. Appl. Phys. 77, 6461 (1995).CrossRefGoogle Scholar
9.Krupanidhi, S. B., in Science and Technology of Electroceramic Thin Films, edited by Auciello, O. and Waser, R., NATO ASI Series E284 (Kluwer, Dordrecht, 1995), p. 23.CrossRefGoogle Scholar
10.Basceri, C., Streiffer, S. K., Kingon, A. I., Bilodeau, S., Carl, R., van Buskirk, P. C., Summerfelt, S. R., McIntyre, P., and Waser, R., in Ferroelectric Thin Films V, edited by Seshu Desu, B., Ramesh, R., Bruce Tuttle, A., Robert Jones, E., and In K. Yoo (Mater. Res. Soc. Symp. Proc. 433, Pittsburgh, PA, 1997), p. 285.Google Scholar
11.Hayashi, T., Oji, N., and Maiwa, H., Jpn. J. Appl. Phys. 33, 5277 (1994).CrossRefGoogle Scholar
12.Klee, M. and Mackens, U., Microelectronic Eng. 29, 185 (1995).CrossRefGoogle Scholar
13.Frey, M. H. and Payne, D. A., Appl. Phys. Lett. 63, 2753 (1993).CrossRefGoogle Scholar
14.Mecartney, M. L. and Gust, M., Int. Symp. Integrated Ferroelectrics (1995).Google Scholar
15.Langjahr, P. A., Wagner, T., Rühle, M., and Lange, F. F., in Epitaxial Oxide Thin Films II, edited by Speck, J. S., Fork, D. K., Wolf, R. W., and Shiosaki, T. (Mater. Res. Soc. Symp. Proc. 401, Pittsburgh, PA, 1996), p. 109.Google Scholar
16.Tani, T., Xu, Z., and Payne, D. A., in Ferroelectric Thin Films III, edited by Tuttle, B. A., Myers, E. R., Desu, S. B., and Larsen, P. K. (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1993), p. 269.Google Scholar
17.Spierings, G. A. C. M., van Zon, J. B. A., Larsen, P. K., and Klee, M., Integrated Ferroelectrics 3, 283 (1993).CrossRefGoogle Scholar
18.Hase, T., Sakuma, T., Amanuma, K., Mori, T., Ochi, A., and Miyasaka, Y., Integrated Ferroelectrics 8, 89 (1995).CrossRefGoogle Scholar
19.Doi, H., Atsuki, T., Soyama, N., Sasaki, G., Yonezawa, T., and Ogi, K., Jpn. J. Appl. Phys. 33, 5159 (1994).CrossRefGoogle Scholar
20.Sporn, D., Merklein, S., Grond, W., Seifert, S., Wahl, S., and Berger, A., Microelectronic Eng. 29, 161 (1995).CrossRefGoogle Scholar
21.Siefert, A., Lange, F. F., and Speck, J. S., J. Mater. Res. 10, 680 (1995).CrossRefGoogle Scholar
22.Komatsu, S. and Abe, K., Jpn. J. Appl. Phys. 34, 3597 (1995).CrossRefGoogle Scholar
23.Arlt, G., Hennings, D., and de With, G., J. Appl. Phys. 58, 1619 (1985).CrossRefGoogle Scholar
24.Waser, R., Proc. ISIF 1996, submitted to Integrated Ferroelectrics.Google Scholar
25.Kajiyoshi, K., Tomono, K., Hamaji, Y., Kasanami, T., and Yoshimura, M., J. Mater. Res. 9, 2109 (1994).CrossRefGoogle Scholar
26.Lange, F. F., Science 273, 903 (1996).CrossRefGoogle Scholar
27.DeVries, R. C., J. Am. Ceram. Soc. 42, 547 (1959).CrossRefGoogle Scholar
28.Eibl, O., Pongratz, P., Skalicky, P., and Schelz, H., Philos. Mag. A 60, 601 (1989).CrossRefGoogle Scholar
29.Kästner, G., Wagner, R., Lacayo, G., and Hilarius, V., J. Mater. Sci. Lett. 8, 802 (1989).CrossRefGoogle Scholar
30.Recnik, A., Bruley, J., Mader, W., Kolar, D., and Rühle, M., Philos. Mag. B 70, 1021 (1994).CrossRefGoogle Scholar
31.Hasenkox, U., Hoffmann, S., and Waser, R., unpublished.Google Scholar
32.Hoffmann, S. and Waser, R., unpublished.Google Scholar
33.Hoffmann, S., Hasenkox, U., Waser, R., Jia, C. L., and Urban, K., in Epitaxial Oxide Thin Films III, edited by Schlom, D. G., Chang-Beom, Eom, Hawley, M. E., Foster, C. M., and Speck, J. S. (Mater. Res. Soc. Symp. Proc. 474, Pittsburgh, PA, 1997), p. 9.Google Scholar
34.Burbank, R. D. and Evans, H. T., Acta Crystallogr. 1, 330 (1948).CrossRefGoogle Scholar
35.Eibl, O., Pongratz, P., Skalicky, P., and Schelz, H., Phys. Status Solidi (a) 108, 495 (1988).CrossRefGoogle Scholar
36.Stemmer, S., Streiffer, S. K., Ernst, F., and Rühle, M., Phys. Status Solidi (a) 147, 135 (1995).CrossRefGoogle Scholar
37.Muschik, T. and Rühle, M., Philos. Mag. A 65, 363 (1992).CrossRefGoogle Scholar
38.Jia, C. L., Grove, M., Dittmann, R., and Urban, K., Philos. Mag. Lett. 74, 25 (1996).CrossRefGoogle Scholar
39.Villars, P. and Calvert, L. D., Pearson's Handbook of Crystallographic Data for Intermetallic Phases (ASM INTERNATIONAL, Materials Park, OH, 1991).Google Scholar
40.Gopalakrishnamurthy, S., Rao, M. S., and Kutty, T. R. N., J. Inorg. Nucl. Chem. 37, 891 (1975).CrossRefGoogle Scholar
41.Jia, C. L., Urban, K., Hoffmann, S., Mertin, M., and Waser, R., Philos. Mag. A 77, 923 (1998).CrossRefGoogle Scholar