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Nonlinear silicon oxide growth patterns in a gold-silicon system

Published online by Cambridge University Press:  31 January 2011

Gervais Leclerc
Affiliation:
L.I.S.E., Facultés Universitaires Notre-Dame de la Paix, Namur, B-5000 Belgique
Louis Paquin
Affiliation:
Centre de recherche en microélectronique, Université de Sherbrooke, 2500, boul. Université, Sherbrooke, Québec, Canada J1K 2R1
Fabrice Baratay
Affiliation:
Centre de recherche en microélectronique, Université de Sherbrooke, 2500, boul. Université, Sherbrooke, Québec, Canada J1K 2R1
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Abstract

Oxide films are grown on a silicon wafer at low temperatures through the catalytic action of a thin gold film. Our results indicate that the oxide film thickness and morphology vary with the initial gold film thickness but do not significantly depend on the temperature. A Fourier analysis of the film structure suggests that the growth mechanism may include a spinodal decomposition where a binary alloy undergoes a phase separation. It is argued that gold silicide is the most likely candidate for spinodal decomposition.

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Articles
Copyright
Copyright © Materials Research Society 1992

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References

1.Hiraki, A., Lugujjo, E., Nicolet, M-A., and Mayer, J.W., Phys. Status Solidi A7, 401 (1971).CrossRefGoogle Scholar
2.Hiraki, A., Lugujjo, E., and Mayer, J. W., J. Appl. Phys. 43, 3643 (1972).CrossRefGoogle Scholar
3.Hiraki, A., Surf. Sci. Rep. 3, 357 (1984).CrossRefGoogle Scholar
4.Hiraki, A., Jpn. J. Appl. Phys. 22, 549 (1983).CrossRefGoogle Scholar
5.Hewett, C.A. and Lau, S.S., Appl. Phys. Lett. 50, 827 (1987).CrossRefGoogle Scholar
6.Chang, Chin-An, in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by Gupta, D. and Ho, P. S. (Noyes Publications, Park Ridge, NJ, 1988), pp. 323368. See also references therein.Google Scholar
7.Hanbücken, M., Imam, Z., Métois, J. J., and Lay, G. Le, Surf. Sci. 162, 628 (1985).CrossRefGoogle Scholar
8.Hanbücken, M. and Lay, G. Le, Surf. Sci. 168, 122 (1986).CrossRefGoogle Scholar
9.Chang, Chin-An and Ottaviani, G., Appl. Phys. Lett. 44, 901 (1984).CrossRefGoogle Scholar
10.Cros, A., Salvan, F., Commandre, M., and Derrien, J., Surf. Sci. 103, L109 (1981).CrossRefGoogle Scholar
11.Taleb-Ibrahimi, A., Sébenne, C. A., and Proix, F., J. Vac. Sci. Technol. A4, 2331 (1986).CrossRefGoogle Scholar
12.Lay, G. Le, Surf. Sci. 132, 169 (1983).CrossRefGoogle Scholar
13.Tsai, C. C., Nemanich, R. J., and Thompson, M.J., J. Vac. Sci. Technol. 21, 632 (1982).CrossRefGoogle Scholar
14.Paquin, L., Leclerc, G., and Wertheimer, M. R., Can. J. Phys. 68, 1396 (1990).CrossRefGoogle Scholar
15.Roland, C. and Grant, M., Phys. Rev. B 39, 11971 (1989).CrossRefGoogle Scholar
16.Fratzl, P., Lebowitz, J. L., Kalos, J., and Marro, J., Acta Metall. 31, 1849 (1983).CrossRefGoogle Scholar
17.Binder, K., Physica 140A, 35 (1986).CrossRefGoogle Scholar
18.Okamoto, H. and Massalski, T. B., Bull. Alloy Phase Diagrams 4, 190 (1983).CrossRefGoogle Scholar
19.Anantharaman, T. R., Luo, H. L., and Klement, W., Nature 210, 1040 (1966).CrossRefGoogle Scholar
20.Anderssen, G. A., Bestel, J. L., Johnson, A. A., and Post, P., Mater.Sci. Eng. 7, 83 (1971).CrossRefGoogle Scholar
21.Green, A. K. and Bauer, E., J. Appl. Phys. 47, 1284 (1976).CrossRefGoogle Scholar
22.Green, A. K. and Bauer, E., J. Appl. Phys. 52, 5098 (1981).CrossRefGoogle Scholar
23.Oura, K. and Hanawa, T., Surf. Sci. 82, 202 (1979).CrossRefGoogle Scholar
24.Hultman, L., Robertsson, A., Hentzell, H. T. G., Engström, I., and Psaras, P. A., J. Appl. Phys. 62, 3647 (1987).CrossRefGoogle Scholar
25.Tsaur, B. Y. and Mayer, J.W., Philos. Mag. A 43, 345 (1981).CrossRefGoogle Scholar
26.Gaigher, H. L. and Van der Berg, N. G., Thin Solid Films 68, 373 (1980).CrossRefGoogle Scholar
27.Bhattacharya, D., Johnson, A. A., Sorem, R. K., and Andersen, G. A., Mater. Sci. Eng. 32, 181 (1984).CrossRefGoogle Scholar
28.Johnson, D.N. and Johnson, A. A., Solid-State Electron. 27, 1107 (1984).CrossRefGoogle Scholar