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On the atomic structure of the Nb/Al2O3 interface and the growth of Al2O3 particles

Published online by Cambridge University Press:  31 January 2011

M. Kuwabara ,
J. C. H. Spence  and
M. Ruhle
M. Kuwabara
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504
J. C. H. Spence
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504
M. Ruhle
Affiliation:
Materials Department, University of California–Santa Barbara, Santa Barbara, California 93106
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Abstract

The growth mechanism for small precipitates of Al2O3 formed by internal oxidation in the Nb–Al2O3 interface is studied in detail. The observations show that the Nb (001)/Al2O3 (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the Al2O3 side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 4 , August 1989 , pp. 972 - 977
Copyright
Copyright © Materials Research Society 1989

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References

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