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One-dimensional β–Ga2O3 nanostructures on sapphire (0001): Low-temperature epitaxial nanowires and high-temperature nanorod bundles

Published online by Cambridge University Press:  01 December 2005

Ko-Wei Chang  and
Jih-Jen Wu
Ko-Wei Chang
Affiliation:
Department of Chemical Engineering, National Cheng Kung University,Tainan, Taiwan, Republic of China
Jih-Jen Wu*
Affiliation:
Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China; and Center for Micro/Nano Technology Research, National Cheng Kung University, Tainan, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: wujj@mail.ncku.edu.tw
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Abstract

Well-aligned Ga2O3 nanowires were formed on the sapphire (0001) substrates at temperatures of 650–450 °C using a single precursor of gallium acetylacetonate via a vapor-liquid-solid (VLS) method. Structural analyses reveal that the well-aligned Ga2O3 nanowires are expitaxially grown on the sapphire (0001) with Ga2O3/ sapphire orientational relationship [201]||[0001] and [211]||[1120]. In addition, formation of the flowerlike Ga2O3 nanorod bundles at a temperature of 750 °C via the vapor-solid (VS) mechanism was also demonstrated. Instead of being catalysts in the VLS method, the Au nanoparticles are proposed to play a role in sinking the Ga vapor for forming the nuclei of Ga2O3 nanorods in the VS method.

Keywords

EpitaxyNanoscaleSemiconductor
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 12 , December 2005 , pp. 3397 - 3403
Copyright
Copyright © Materials Research Society 2005

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